Hostname: page-component-848d4c4894-x24gv Total loading time: 0 Render date: 2024-06-02T01:51:25.300Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon

Published online by Cambridge University Press:  11 February 2011

S. Van Elshocht ,
M. Caymax ,
S. De Gendt ,
T. Conard ,
J. Pétry ,
M. Claes ,
T. Witters ,
C. Zhao ,
B. Brijs  and
O. Richard
...Show all authors
S. Van Elshocht
Affiliation:
Imec v.z.w., Heverlee, Belgium
M. Caymax
Affiliation:
Imec v.z.w., Heverlee, Belgium
S. De Gendt
Affiliation:
Imec v.z.w., Heverlee, Belgium
T. Conard
Affiliation:
Imec v.z.w., Heverlee, Belgium
J. Pétry
Affiliation:
Imec v.z.w., Heverlee, Belgium
M. Claes
Affiliation:
Imec v.z.w., Heverlee, Belgium
T. Witters
Affiliation:
Imec v.z.w., Heverlee, Belgium
C. Zhao
Affiliation:
Imec v.z.w., Heverlee, Belgium
B. Brijs
Affiliation:
Imec v.z.w., Heverlee, Belgium
O. Richard
Affiliation:
Imec v.z.w., Heverlee, Belgium
H. Bender
Affiliation:
Imec v.z.w., Heverlee, Belgium
W. Vandervorst
Affiliation:
Imec v.z.w., Heverlee, Belgium
R. Carter
Affiliation:
Imec v.z.w., Heverlee, Belgium
J. Kluth
Affiliation:
International Sematech, Austin, Texas, US, assignee at IMEC
L. Daté
Affiliation:
Applied Materials France, Meylan, France
D. Pique
Affiliation:
Applied Materials France, Meylan, France
M. M. Heyns
Affiliation:
Imec v.z.w., Heverlee, Belgium
Get access

Abstract

This paper discusses metal organic chemical vapor deposited (MOCVD) HfO2 layers using tetrakis(diethylamido)hafnium (TDEAH) as precursor. We have studied the influence of the starting surface and deposition temperature on the growth kinetics and physical properties of the HfO2 layers. Important characteristics such as crystalline state, density, and organic contamination in the layers were found to be dependent on these parameters.

Typical for this deposition process is the formation of an interfacial layer underneath the high-k layer. Its composition and thickness, affecting scaling of the equivalent oxide thickness, are shown to be closely related to the HfO2 process parameters mentioned above.

Finally, we will show electrical results for HfO2/polySi gate stacks indicating the effect for deposition temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N5.15
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. International Roadmap for Semiconductors, 2001 edn.Google Scholar
2. Kingon, A.I., Maria, J.-P., and Streiffer, S.K., Nature 406, 1032 (2000).Google Scholar
3. Heyns, M.M., Vanhaverbeke, S., Meuris, M., Mertens, P.W., Schmidt, H., Kubota, M., Philiposian, A., Dillenbeck, K., Graf, D., Schneg, A., and De Blank, R., Mater. Res. Soc., Symp. Proc. 315, 35 (1993).Google Scholar
4. Zhao, C., Roebben, G., Heyns, M., Van Der Biest, O., Key Engineering Materials, Euro Ceramics, p. 1285.Google Scholar