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High Energy Implantation of Boron in 4H-SiC

Published online by Cambridge University Press:  10 February 2011

Adolf Schönerl ,
Stefan Karlsson ,
Thomas Schmitt ,
Anders Hallén ,
Manfred Frischholz  and
Kurt Rottner
Adolf Schönerl
Affiliation:
1MC, P.O.Box Electrum 233, S-164 40 Kista Stockholm, Sweden
Stefan Karlsson
Affiliation:
1MC, P.O.Box Electrum 233, S-164 40 Kista Stockholm, Sweden
Thomas Schmitt
Affiliation:
1MC, P.O.Box Electrum 233, S-164 40 Kista Stockholm, Sweden
Anders Hallén
Affiliation:
Royal Institute of Technology, Department of Solid State Electronics, P.O.Box Electrum 229, S-164 40 Kista Stockholm, Sweden
Manfred Frischholz
Affiliation:
ABB Corporate Research c/o IMC, P.O.Box Electrum 233, S-164 40 Kista Stockholm, Sweden
Kurt Rottner
Affiliation:
ABB Corporate Research c/o IMC, P.O.Box Electrum 233, S-164 40 Kista Stockholm, Sweden
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Abstract

The high energy implantation of boron into n-type Silicon Carbide epitaxial layers of the polytype 4H was investigated for various sample temperatures during implantation and different doping concentrations. Depth profiling using secondary ion mass spectrometry was applied to determine the boron distribution in the as-implanted epilayers and the re-distribution of boron atoms during a half hour heat treatment at a temperature of 1700 °C. The SIMS boron profiles are compared to numerical Monte Carlo calculations using the program TRIM96 and to electrical profiling by scanning capacitance microscopy.

In general we found that boron is moving towards the implantation damage already during the implantation of a profile with four different energies. The defect enhanced diffusion of boron is more pronounced during the high temperature anneal, where a higher concentration of boron diffusing towards the sample surface was observed. Into the bulk of the epilayer the boron diffusion is on a lower level and shows an exponential decay with a length of up to 5 Pm. An out-diffusion of boron during the post implantation anneal was not observed at implantation temperatures up to 500 °C.

Electrical profiling using scanning capacitance microscopy revealed that complicated layer structures with several pn-junctions can occur due to the re-distribution of boron during post implantation anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 469
Copyright
Copyright © Materials Research Society 1998

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References

1. Pensl, G., Afanasév, V. V., Bassler, M., Schadt, M., Troffer, T., Heindl, J., Strunk, H. P., Maier, M., and Choyke, W. J., Silicon Carbide and Related Materials 1995, Institute of Physics Conf. Series No. 142, Kyoto, (1995), p275 Google Scholar
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