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Hydrosilylation of Silicon Surfaces: Crystalline versus Amorphous

Published online by Cambridge University Press:  01 February 2011

Andrea Lehner ,
Georg Steinhoff ,
Martin S. Brandt  and
Martin Eickhoff
Andrea Lehner
Affiliation:
Martin Stutzmann Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
Georg Steinhoff
Affiliation:
Martin Stutzmann Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
Martin S. Brandt
Affiliation:
Martin Stutzmann Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
Martin Eickhoff
Affiliation:
Martin Stutzmann Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
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Abstract

Using thermally induced hydrosilylation, organic molecules were covalently bonded to H-terminated crystalline silicon (111) and hydrogenated amorphous silicon (a-Si:H) surfaces. The resulting chemical surface structure was analyzed by X-ray photoelectron spectroscopy (XPS) and compared to that of silicon surfaces covered by a native oxide or terminated with hydrogen. For both kinds of substrates, the presence of oxygen on the surface is found to hinder the hydrosilylation reaction. Stable H-termination as a starting point for a successful hydrosilylation can be obtained on a-Si:H surfaces with much less technological effort than on crystalline silicon surfaces. Photoconductivity measurements of the different a-Si:H surfaces at low intensity of illumination (monomolecular recombination regime) indicate that the hydrosilylated surface has less defects than the H-terminated surfaces or surfaces covered with native oxide. Spin-dependent photoconductivity measurements identify the dominant paramagnetic defect at the hydrosilylated a-Si:H surface to be the silicon dangling bond.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A10.5
Copyright
Copyright © Materials Research Society 2003

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