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In Situ Study of Dislocation Behavior in Columnar Al Thin Film on Si Substrate During Thermal Cycling

Published online by Cambridge University Press:  10 February 2011

Charles W. Allen ,
Herbert Schroeder  and
Jon M. Hiller
Charles W. Allen
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439allen@aaem.amc.anl.gov
Herbert Schroeder
Affiliation:
Institute für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Jon M. Hiller
Affiliation:
Madison Area Technical College, Madison, WI. 53704
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Abstract

In situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructures during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500°C, nearly stable Al columnar grain structure is established with average grain less than a μm. On rapid cooling (3–30+ °C/s) from 500°C, dislocations first appear at a nominal temperature of 360–380°C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments we have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 123
Copyright
Copyright © Materials Research Society 2000

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References

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