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In-Situ Aluminum-Induced Crystallization of Si Thin-Films on Glass Substrates above the Eutectic Temperature using HW-CVD

Published online by Cambridge University Press:  21 March 2011

Ozgenc Ebil ,
Roger Aparicio  and
Robert Birkmire
Ozgenc Ebil
Affiliation:
Institute of Energy Conversion, University of Delaware Newark, DE 19716 U.S.A.
Roger Aparicio
Affiliation:
Institute of Energy Conversion, University of Delaware Newark, DE 19716 U.S.A.
Robert Birkmire
Affiliation:
Institute of Energy Conversion, University of Delaware Newark, DE 19716 U.S.A.
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Abstract

The growth of poly-Si films on glass substrates using an in-situ aluminum-induced crystallization (AIC) process above the Si-Al eutectic temperature of 577°C is discussed. Silicon films were deposited by Hot-Wire Chemical Vapor Deposition (HW-CVD) onto Al coated Corning 7059 glass substrates. The back surface coverage and the average grain size of the films were compared as a function of growth rate and the Si/Al thickness ratio. SEM and EDS analysis of samples with a Si/Al ratio of 1 revealed two domains in the films which varied in morphology and composition; rougher areas containing a mixture of Si and Al with Al content up to 35%, and relatively smoother areas composed of almost entirely Si. This non-uniform morphology seems to be the result of the absence of a native oxide layer when a liquid phase is formed during the deposition. Si grains as large as 50 m m in diameter and back surface coverage up to 90% were obtained for both the Si/Al ratios of 1 and 5. However, no continuous Si films were obtained. The sample with a Si/Al ratio of 1 had columnar grains reaching to the film surface, whereas on the Si/Al ratio of 5 large Si grains did not extend to the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.24
Copyright
Copyright © Materials Research Society 2004

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References

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