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A Laplace Transform Technique for Direct Determination of Density of Electronic States in Disordered Semiconductors from Transient Photocurrent Data

Published online by Cambridge University Press:  17 March 2011

Mariana J. Gueorguieva ,
Charles Main  and
Steve Reynolds
Mariana J. Gueorguieva
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee, DD1 1HG, U.K.
Charles Main
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee, DD1 1HG, U.K.
Steve Reynolds
Affiliation:
School of Science and Engineering, University of Abertay Dundee, Dundee, DD1 1HG, U.K.
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Abstract

A new technique for direct determination of the density of electronic states (DOS) in disordered semiconductors is described. It involves Laplace transformation of transient photocurrent data I(t) followed by the numerical solution of the system of linear algebraic equations obtained from the Fredholm integral of the first kind, for a DOS represented by a series of discrete levels. No approximations are used in the solution, and no prior assumptions as to the form of the DOS are made. The fidelity of this method is assessed and compared with existing techniques by application to computer-simulated I(t) data generated from single-level and continuous DOS profiles, and to experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A27.8
Copyright
Copyright © Materials Research Society 2000

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References

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