Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-16T07:29:43.914Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Dielectric Constant Porous Silsesquioxane Films: Effect of Thermal Treatment

Published online by Cambridge University Press:  17 March 2011

Y. K. Siew ,
G. Sarkar ,
X. Hu ,
Y. Xu  and
A. See
Y. K. Siew
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798 (E-mail: siewyk@charteredsemi.com)
G. Sarkar
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798
X. Hu
Affiliation:
Division of Materials Engineering, School of Applied Science, Nanyang Technological University Nanyang Avenue, Singapore, 639798
Y. Xu
Affiliation:
R&D Dept. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
A. See
Affiliation:
R&D Dept. Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406
Get access

Abstract

Low dielectric constant, nanoporous hydrogen silsesquioxane (HSQ) films were prepared using hybrid templating method by addition of a sacrificial labile polymer, polybutadiene (PB). Thermal gravimetric analyzer (TGA) was employed to monitor the decomposition behavior of HSQ-PB films. Curing of HSQ and decomposition of PB were performed by a two-stage thermal treatment to obtain a defect-free film. The porosity level and pore morphology of the resultant porous films were found to be dependent upon thermal treatment conditions applied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.15.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Volksen, W., Miller, R.D., Hedrick, J.L., Hawker, C.J., Remenar, J. F., Furuta, P., Nguyen, C., Yoon, D.Y. and Toney, M., Sept. 7-9, 1999 VMIC Conference. P.407 (1999).Google Scholar
[2] Maxwell-Garnett, J.C., Philos. Trans. Roy. Soc. 15, 2033 (1982).Google Scholar
[3] Landauer, R., AIP Conf. Proc. 40, 2 (1978).10.1063/1.31150Google Scholar
[4] Jin, C. M., Luttmer, J. D., Smith, D. M., and Ramos, T. A., MRS Bull. 22, 39 (1997).10.1557/S0883769400034187Google Scholar
[5] Ting, C. H. and Seidel, T. E., Mater. Res. Soc. Symp. Proc. 381, 3 (1995).10.1557/PROC-381-3Google Scholar
[6] Laura Peters, Semiconductor international, September (1998).Google Scholar
[7] Miller, R. D., Hedrick, J. L., Yoon, D. Y., Cook, R. F., and Hummel, J. P., MRS Bull. 22,44 (1997).10.1557/S0883769400034199Google Scholar
[8] O'Neill, M.L., Robeson, L.M., Markley, T.J., Gao, X., Langsam, M., Stets, J., Roberts, D.A., Motakef, S., and Sierocki, P.R., VMIC Conf. Proc.1999, p. 428 (1999).Google Scholar
[9] Xu, Y., Tsai, Y.-P., Tu, K. N., Zhao, B., Liu, Q.-Z., Brongo, M., , George Sheng, T. T. and Tung, C. H., Applied Physics Letters 75, 6, 853 (1999).10.1063/1.124535Google Scholar
[10] Hedrick, J.L., Miller, R.D., Hawker, C.J., Carter, K.R., Volksen, W., Yoon, D.Y. and Toney, M., Advanced Materials 10, 13, 1049 (1998).10.1002/(SICI)1521-4095(199809)10:13<1049::AID-ADMA1049>3.0.CO;2-F3.0.CO;2-F>Google Scholar
[11] Kohl, A. T., Mimna, R., Shick, R., Rhodes, L., Wang, Z. L., and Kohl, P. A., Electrochem. Solid-State Lett. 2,77 (1999).10.1149/1.1390740Google Scholar
[12] Nakashima, A., Muraguchi, R., Komatsu, M., Ohkura, Y., Miyajima, M., Harada, H., and Fukuyama, S., 1998 DUMIC Conference Proceedings, pg. 25–30 (1998).Google Scholar
[13] Born, M., Wolf, E., Principles of Optics, Pergamon Press, New York (1975).Google Scholar
[14] Hong, J.K., Yang, H.S., Jo, M.H., Park, H.H., Choi, S.Y., Thin Solid Films, 495, 308–309 (1997).Google Scholar
[15] Tobben, D., Weigand, P., Shapiro, M.J., and Cohen, S.A., Mat. Res. Soc. Symp. Proc. 443, p 195 (1997)10.1557/PROC-443-195Google Scholar
[16] Siew, Y.K., Sarkar, G., Hu, X., Hui, J., See, A. and Chua, C. T., Journal of Electrochemical Society, 147 (1) 335–339 (2000).10.1149/1.1393196Google Scholar