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Low Temperature Hydrogen Induced Amorphous to Crystalline Silicon Phase Transformations

Published online by Cambridge University Press:  10 February 2011

C. M. Fortmann ,
P. Hapke ,
A. Lambertz  and
F. Finger
C. M. Fortmann
Affiliation:
Dept. of Applied Mathematics and Statistics State University of New York at Stony Brook, Stony Brook, New York 11794-3600
P. Hapke
Affiliation:
Dept. of Applied Mathematics and Statistics State University of New York at Stony Brook, Stony Brook, New York 11794-3600
A. Lambertz
Affiliation:
Dept. of Applied Mathematics and Statistics State University of New York at Stony Brook, Stony Brook, New York 11794-3600
F. Finger
Affiliation:
Dept. of Applied Mathematics and Statistics State University of New York at Stony Brook, Stony Brook, New York 11794-3600
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Abstract

The low temperature hydrogen induced phase transformations are the basis for the layer-by-layer micro-crystalline silicon growth technique which involves the sequential deposition of thin amorphous silicon layers followed by hydrogen treatment. Very high frequency-PECVD layer-by-layer microcrystalline film growth was studied as a function of frequency. The highest crystalline content films were prepared on glass substrates at 49.7 MHz with deposition cycle times of 12 seconds and hydrogen treatment times of 120 seconds or longer. At lower frequencies, 13.56 and 27 MHz, no micro-crystalline content was observed. At higher frequencies (94.7 MHz) crystalline content was reduced compared to that of the 49.7 MHz case. Crystalline content is not correlated with the hydrogen etch rate as the highest etch rates occurred at 94.7 MHz while etch rates at 49.7 and 27 MHz were lower. It is possible to prepare thin micro-crystalline films using the VHF layer-by-layer growth technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 283
Copyright
Copyright © Materials Research Society 1996

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