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Low Temperature Preparation of Y‐Ba‐Cu‐0 High Tc Superconducting Thin Films by Plasma‐Enhanced Organometallic Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

Jing Zhao
Affiliation:
Department of Materials Science and Engineering Current address: EMCORE Co., 35 Elizabeth Ave., Somerset, NJ 08873
Henry O. Marcy
Affiliation:
Department of Electrical Engineering and Computer Science
Lauren M. Tonge
Affiliation:
Department of Chemistry
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering Authors to whom correspondence should be addressed.Materials Research Center, Northwestern University, Evanston, IL 60208
Tobin J. Marks
Affiliation:
Department of Chemistry Authors to whom correspondence should be addressed.Materials Research Center, Northwestern University, Evanston, IL 60208
Carl R. Kannewurf
Affiliation:
Department of Electrical Engineering and Computer Science Authors to whom correspondence should be addressed.Materials Research Center, Northwestern University, Evanston, IL 60208
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Abstract

We report here a plasma‐enhanced organometallic chemical vapor deposition process for the preparation of YBa2Cu3O7‐x thin films using two rf plasma coupling configurations. For the films grown under a direct plasma glow, the YBa2Cu3O7‐x phase is not found in the as‐deposited state. However, by employing plasma‐activated nitrous oxide as the reactant gas, superconducting YBa2Cu3O7‐x films having a low carbon content and a mirror‐like surface have been prepared in‐situ at a substrate temperature of 610°C using an organometallic chemical vapor deposition process.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

1 Zhao, J., and Wessels, B.W., unpublished.Google Scholar
2 Zhao, J., Dahmen, K.H., Marcy, H.O., Tonge, L.M., Marks, T.J., Wessels, B.W., and Kannewurf, C.R. Appl. Phys. Lett. 53, 1750 (1988)Google Scholar
3 Bai, G.R., Tao, W., Wang, R., Xie, L.M., Zhang, X.K., Hang, J., Qian, C.T., Zhou, W.K., Ye, C.Q., Ren, J.G., Li, Y.Q., Luo, W.M., and Chen, J.B. Appl. Phys. Lett. 55,194 (1989)Google Scholar
4 Handbook of Thin‐Film Deposition Processes and Techniques, edited by K.K. Schuegraf, Noyes Publication (1988)Google Scholar
5 Wu, X.D., Inam, A., Hegde, M.S., Wilkens, B., Chang, C.C., Hwang, D.M., Nazar, L., Venkatesan, T., Miura, S., Matsubara, S., Miyasaka, Y., and Shohata, N. Appl. Phys. Lett. 54, 754 (1989)Google Scholar
6 Suhr, H., Oehr, C., Holzshuh, H., Schmaderer, F., Wahl, G., Kruck, T., and Kinnen, A. Physica C. 153‐155, 784 (1988)Google Scholar