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Low Threshold Field Emission from Amorphous Carbon Films Grown by Electrochemical Deposition

Published online by Cambridge University Press:  01 February 2011

Hideo Kiyota ,
Mikiteru Higashi ,
Tateki Kurosu  and
Masamori Iida
Hideo Kiyota
Affiliation:
hkiyota@ktmail.ktokai-u.ac.jp, Kyushu Tokai University, Electrical and Electronic Systems, 9-1-1 Toroku, Kumamoto, 862-8652, Japan, +81-96-386-2654, +81-96-386-2754
Mikiteru Higashi
Affiliation:
5atrd013@keyaki.cc.u-tokai.ac.jp, Tokai University, Department of Electronics, 1117 Kitakaname, Hiratsuka, Kanagawa, 259-1207, Japan
Tateki Kurosu
Affiliation:
kurosu@keyaki.cc.u-tokai.ac.jp, Tokai University, Department of Electronics, 1117 Kitakaname, Hiratsuka, Kanagawa, 259-1207, Japan
Masamori Iida
Affiliation:
iida-m@ttc.u-tokai.ac.jp, Tokai University Junior College, Department of Information and Network, 2-3-23 Takanawa, Minato-ku, Tokyo, 108-8649, Japan
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Abstract

Electrochemical deposition of amorphous carbon (a-C) film is performed by applying a direct-current potential to substrates immersed in methanol. Both scanning electron microscopy and Raman results indicate that smooth and homogeneous a-C films are grown on specific substrate materials such as Si, Ti, and Al. Field emission measurements demonstrate excellent emission properties such as threshold fields lower than 5 V/μm. Field enhancement factors are estimated to be 1300–1500; these are attributed to local field enhancements around sp2 carbon clusters that are embedded in the a-C films. Emission properties of a-C films grown on Si exhibit a current saturation under higher applied fields. These saturation behaviors are explained by an effect of a potential barrier formed at the interface between a-C films and substrates. Since the interface barrier is reduced by formation of the Ti interfacial layer, an approach to use carbide formation at the interface is verified as useful to improve the emission properties of a-C films.

Keywords

Celectrochemical synthesisfield emission
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 956: Symposium J – Diamond Electronics—Fundamentals to Applications , 2006 , 0956-J09-10
Copyright
Copyright © Materials Research Society 2007

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References

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