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MBE Grown AlN Films on SiC for Piezoelectric MEMS Sensors

Published online by Cambridge University Press:  01 February 2011

Dharanipal Doppalapudi ,
Richard Mlcak ,
Jeffrey Chan ,
Harry Tuller ,
Anirban Bhattacharya  and
Theodore Moustakas
Dharanipal Doppalapudi
Affiliation:
Boston MicroSystems Inc., Woburn, MA 01801
Richard Mlcak
Affiliation:
Boston MicroSystems Inc., Woburn, MA 01801
Jeffrey Chan
Affiliation:
Boston MicroSystems Inc., Woburn, MA 01801
Harry Tuller
Affiliation:
Boston MicroSystems Inc., Woburn, MA 01801
Anirban Bhattacharya
Affiliation:
Boston University, Boston MA 02215
Theodore Moustakas
Affiliation:
Boston MicroSystems Inc., Woburn, MA 01801 Boston University, Boston MA 02215
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Abstract

Miniaturized piezoelectric sensors based on Microelectromechanical Systems (MEMS) offer the advantages of reduced size, reduced power consumption, increased sensitivity coupled with the ability to form compact multi-sensor arrays. Fabrication of such sensors from single crystal materials further insure more highly reproducible and stable devices with improved performance. In this paper, we describe the integration of MBE grown AlN films onto photoelectrochemically machined SiC microcantilevers and membranes. AlN exhibits excellent piezoelectric properties, including an electromechanical coupling coefficient of 0.088 and a high in-plane acoustic velocity (∼5700m/sec) as well as excellent thermal-mechanical compatibility with SiC. The fabrication of AlN-SiC-based microresonators and flexural plate wave devices, and their application to chemical, biological and fluid sensing, are reported.

Type
articles
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.61
Copyright
Copyright © Materials Research Society 2004

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References

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