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Measurement of Impurity Profiles in Microcrystalline Silicon Solar Cells by SIMS

Published online by Cambridge University Press:  17 March 2011

Arup Dasgupta ,
Uwe Zastrow ,
Andreas Lambertz ,
Oliver Vetterl ,
Friedhelm Finger ,
Wolfhard Beyer  and
Swati Ray
Arup Dasgupta
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta, INDIAE-mail:arup_dasgupta@hotmail.com
Uwe Zastrow
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, Germany
Andreas Lambertz
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, Germany
Oliver Vetterl
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, Germany
Friedhelm Finger
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, Germany
Wolfhard Beyer
Affiliation:
Institut für Photovoltaik (IPV), Forschungszentrum Jülich GmbH, Germany
Swati Ray
Affiliation:
Energy Research Unit, Indian Association for the Cultivation of Science, Calcutta, INDIA
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Abstract

The concentration profiles of B, P, Zn, and O in the active intrinsic (i) νc-Si:H layer and across the interfaces in p-i-n and n-i-p structures have been measured with SIMS. For the ZnO/νc-p/νc-i sequences, an apparent B and O profile extends over several hundred nanometers into the i-layer, and high levels of Zn can be found well above the ZnO substrate layer. These profiles are not affected by annealing at the deposition temperature. Much lower impurity concentrations are measured for n-i-p deposition sequences, or when the p-layer or the i-layer is amorphous. Ruling out diffusion and intermixing processes, evidence for the presence of pinholes in the material is presented, which explain most of the experimental findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.5
Copyright
Copyright © Materials Research Society 2000

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References

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