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Micro-Raman Study of Stress Distribution and Thermal Relaxation of Oxidized Silicon Membranes

Published online by Cambridge University Press:  15 February 2011

C. Malhaire ,
Y. Guyot ,
M. Le Berre ,
B. Champagnonn ,
A. Sibai  and
D. Barbier
C. Malhaire
Affiliation:
LPM, UMR C551 1, INSA, bat 502, 20 Av. Einstein, 69621 Villeurbanne Cedex, France
Y. Guyot
Affiliation:
LPCML, UMR 5620, Univ. Lyon 1, bat 205, 69622 Villeurbanne Cedex, France
M. Le Berre
Affiliation:
LPM, UMR C551 1, INSA, bat 502, 20 Av. Einstein, 69621 Villeurbanne Cedex, France
B. Champagnonn
Affiliation:
LPCML, UMR 5620, Univ. Lyon 1, bat 205, 69622 Villeurbanne Cedex, France
A. Sibai
Affiliation:
LPM, UMR C551 1, INSA, bat 502, 20 Av. Einstein, 69621 Villeurbanne Cedex, France
D. Barbier
Affiliation:
LPM, UMR C551 1, INSA, bat 502, 20 Av. Einstein, 69621 Villeurbanne Cedex, France
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Abstract

Composite SiO2/Si membranes are used in various type of sensors among them, resonant and pressure sensors. However due to a large thermal mismatch, residual induced stresses may affect the devices long term reliability especially for thin membranes (˜5 μm). In this study, we have characterized test structures consisting of SiO2/Si membranes with respective thickness ratio between 2 and 10. Micro-Raman Spectroscopy, well known to be an accurate, non destructive method to determine residual stresses in microelectronic devices, has shown to be a powerful testing technique to measure local stresses on micromachined structures such as membranes, with a high spatial (10 μm2 ) and stress resolution (8 MPa). At room temperature, Raman line (520 cm−1) shifts between 0.05 and 1 cm−1 are observed. Highest frequency shifts of 1cm−1 corresponds to a 230 MPa biaxial stress. Finite Element analysis (ANSYS) was used to model the thermal stress distribution over the micromachined bilayer membrane, yielding a satisfactorily agreement with the experimental results over a large membrane area. The Finite Element analysis was correlated with optical profilometer deflection measurements. Membrane deflections up to 48 μm (more than 10 times the membrane thickness) have been measured. Furthermore, Micro-Raman Spectroscopy results up to 300°C are shown and related to temperature dependent deflection measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 179
Copyright
Copyright © Materials Research Society 1997

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References

[1] De Wolf, I., Vanhellemont, J., Romano-Rodriguez, A., Norström, H. and Maes, H. E., J. Appl. Phys. 71 (1992) 898.Google Scholar
[2] Guyot, Y., Malhaire, C., Berre, M. Le, Champagnon, B., Sibai, A., Bustarret, E., Barbier, D. accepted in Mat. Sci.& Eng. B (1996)Google Scholar
[3] Malhaire, C., Berre, M. Le, Barbier, D., Mater. Res. Soc. Symp. I, Fall'96Google Scholar
[4] Blech, I., Cohen, U., J. Appl. Phys. 53 (6), 4202 (1982).Google Scholar
[5] Soma, T., Kagaya, H. Matsuo, in Properties of Silicon, published by INSPEC (EMIS Datareviews series n°4, London and New York, 1988), pp. 33–34.Google Scholar
[6] Bourgeois, C., Hermann, J., Blanc, N., De Rooij, N. F. and Rudolf, F.. Presented at the 8th Int. Conf. on Solid State Sensors and Actuators, Stockholm, Sweden, June 25–29, 1995.Google Scholar
[7] Wortman, J. J., Evans, R. A.. J. Appl. Phys. 36 (1), 153 (1965).Google Scholar
[8] General Electric Doc. N°7700, october 1986.Google Scholar
[9] Brunner, K., Abstreiter, G., Kolbesen, B.O. and Meul, H. W., Appl. Surf. Sci. 39 (1989) 116.Google Scholar
[10] Cali, J., Doctoral Thesis, Univ. J.; Fourier, Grenoble 1996.Google Scholar
[11] Hart, T.R., Aggarwal, R.L. and Lax, B.; Phys. Rev. B1, (1970) 638 Google Scholar