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Microstructure and Electronic Properties of Thin Film Nanoporous Silica as a Function of Processing and Annealing Methods

Published online by Cambridge University Press:  17 March 2011

Christine Caragianis-Broadbridge ,
John R. Miecznikowski ,
Wenjuan Zhu ,
Zhijiong Luo ,
Jin-ping Han  and
Ann Hein Lehman
Christine Caragianis-Broadbridge
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106 Visiting Fellow, Yale University
John R. Miecznikowski
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106
Wenjuan Zhu
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Zhijiong Luo
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Jin-ping Han
Affiliation:
Department of Electrical Engineering;, Yale University, New Haven, CT, 06520
Ann Hein Lehman
Affiliation:
Department of Engineering; Trinity College, Hartford, CT, 06106
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Abstract

Alcogels, aerogel precursors, were prepared by hydrolysis and condensation of the metal alkoxide tetraethylorthosilicate and were catalyzed by both acids and bases, according to a standard reaction. Alcogel solution was spin coated onto p-type silicon wafers and fluid extraction was achieved in an uncontrolled (room temperature, atmospheric pressure) environment. Film porosity was retained through surface modification and/or low vapor pressure solvent techniques. The microstructure and electronic properties of the resulting films were evaluated using non-contact atomic force microscopy (nc-AFM), cross sectional scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Metal insulator semiconductor (MIS) devices were prepared and current-voltage and capacitance-voltage measurements were obtained from these devices. Annealing studies reveal a dramatic temperature dependent effect on both the microstructure and electronic properties of the porous silica films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.16.1
Copyright
Copyright © Materials Research Society 2000

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