Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-02T01:59:31.255Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure Control of (Ba, Sr)TiO3 Films for Gigabit Dram

Published online by Cambridge University Press:  10 February 2011

H. Shen ,
D. E. Kotecki ,
R. J. Murphy ,
M. Zaitz ,
R. B. Laibowitz ,
T. M. Shaw ,
K. L. Saenger ,
J. Baniecki ,
G. Beitel  and
V. Klueppel
...Show all authors
H. Shen
Affiliation:
Siemens Microelectronics, Inc., 1580 Route 52, Hopewell Junction, NY 12533
D. E. Kotecki
Affiliation:
IBM Microelectronics, 1580 Route 52, Hopewell Junction, NY 12533
R. J. Murphy
Affiliation:
IBM Microelectronics, 1580 Route 52, Hopewell Junction, NY 12533
M. Zaitz
Affiliation:
IBM Microelectronics, 1580 Route 52, Hopewell Junction, NY 12533
R. B. Laibowitz
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
T. M. Shaw
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
K. L. Saenger
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
J. Baniecki
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
G. Beitel
Affiliation:
Siemens AG, Semiconductors, Otto Hahn Ring 6, D-81730 München, Germany
V. Klueppel
Affiliation:
Siemens AG, Corporate Technology, Otto Hahn Ring 6, D-81730, Munich, Germany
H. Cerva
Affiliation:
Siemens AG, Corporate Technology, Otto Hahn Ring 6, D-81730, Munich, Germany
Get access

Abstract

(Ba, Sr)TiO3 films were deposited on Pt-coated SiO2/Si wafers by the MOCVD method. Experiments were conducted to investigate the mechanisms of nucleation and growth. It was observed that the diameter of the (Ba, Sr)TiO3 grains is established in the early stages of nucleation and does not increase substantially during the growth of the film. By controlling the process conditions, it is possible to control the final microstructure and improve the electrical properties of (Ba, Sr)TiO3 films. I-V and C-V measurements show that (Ba, Sr)TiO3 films with a thickness of approximately 15nm can produce a charge storage density of >120 fF/μm2 with a leakage current density of < 10 nA/cm2 at IV, making them suitable for Gigabit-scale DRAM applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 33
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kotecki, D.E., Integ.Ferroelectr., 16, 1 (1997).Google Scholar
2. Izuha, M., Abe, K., Koike, M., Takeno, S., Fukushima, N., Appl. Phys. Lett., 70, 1405–07 (1997).Google Scholar
3. Paek, S.H., Won, J., Lee, K.S., Choi, J.S., Park, C.S., Jpn. J. Appl. Phys., 35, 5757–62 (1996).Google Scholar
4. Kingon, A.I., Streiffer, S.K., Basceri, C., and Summerfeit, S.R., Materials Research Socitey Bulletin, 21, 46–53 (1996).Google Scholar
5. Novellus, Inc., San Jose, CA.Google Scholar
6. VanBuskirk, P.C., Bilodeau, S.M., Roeder, J.F., Kirlin, P.S., J. Appl. Phys., 35, 1 (1996).Google Scholar
7. Vanbuskirk, P.C., Roder, J.F., and Bilodeau, S., Integ. Ferroelectr. 10, 9–22 (1995).Google Scholar
8. Basceri, C., Streiffer, S.K., Kingon, A.I., and Waser, R., J. Appl. Phys., 82, 2497–2504 (1997).Google Scholar
9. Dietz, G.W., Schumacher, M., Waser, R., Streiffer, S.K., Basceri, C., and Kingon, A.I., J. Appl. Phys., 82, 2359–2364 (1997).Google Scholar