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Near Infrared Detectors and Solar Cells Based on Microcrystalline Silicon Germanium

Published online by Cambridge University Press:  17 March 2011

M. Krause ,
H. Stiebig ,
R. Carius  and
H. Wagner
M. Krause
Affiliation:
Forschungszentrum Jülich GmbH, IPV, 52425 Jülich, Germany, m.krause@fz-juelich.de
H. Stiebig
Affiliation:
Forschungszentrum Jülich GmbH, IPV, 52425 Jülich, Germany
R. Carius
Affiliation:
Forschungszentrum Jülich GmbH, IPV, 52425 Jülich, Germany
H. Wagner
Affiliation:
Forschungszentrum Jülich GmbH, IPV, 52425 Jülich, Germany
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Abstract

Microcrystalline silicon germanium alloys (ν-Si1−xGex:H) exhibit an enhanced optical absorption in the near infrared region with increasing germanium content. Therefore, the employment of this material as intrinsic absorber is a promising challenge for thin film technology in photovoltaics and sensorics. The influence of hydrogen dilution on the material and the performance of pin diodes prepared in a PECVD process with 10 % GeH4 in the gas phase is discussed. These results are compared with the characteristics of diodes prepared with higher germane content in the gas phase. With increasing germane content the solar cell parameters Voc and FF decrease and the deposition regime where good optoelectronic properties are observed is narrowed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A13.7
Copyright
Copyright © Materials Research Society 2000

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References

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