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A New Computationally-Efficient 2-D Model for Boron Implants into (100) Single-Crystal Silicon

Published online by Cambridge University Press:  22 February 2011

Steven J. Morris ,
Shyh-Horng Yang ,
David H. Lim  and
AL. F. Tasch
Steven J. Morris
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
Shyh-Horng Yang
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
David H. Lim
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
AL. F. Tasch
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
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Abstract

In this paper, the first comprehensive and computationally-efficient two-dimensional model is reported for boron implants into (100) single-crystal silicon with explicit dependence on energy, dose, implant angles, mask height, mask orientation, and rotation of the wafer during the implant. The model and its implementation into SUPREM 4 are described, and where possible, the explicit dependencies are illustrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 623
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Klein, K., Park, C., and Tasch, A., IEEE Trans, on Elec. Dev. 39, 1614 (1992).Google Scholar
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