Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-06-03T05:31:54.076Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of Mn2+ Triplet Clusters and Non-Nearest-Neighbor Exchange Effect in (Cd,Mn)Te

Published online by Cambridge University Press:  21 February 2011

Xiaomei Wang ,
D. Heiman ,
S. Foner  and
P. Becla
Xiaomei Wang
Affiliation:
Also Department of Physics
D. Heiman
Affiliation:
Massachusetts Institute of Technology, Francis Bitter National Magnet Laboratory, Cambridge, MA 02139
S. Foner
Affiliation:
Also Department of Physics
P. Becla
Affiliation:
Massachusetts Institute of Technology, Francis Bitter National Magnet Laboratory, Cambridge, MA 02139
Get access

Extract

Dilute magnetic semiconductors (DMS), such as Cd1−xMnxTe, are excellent hosts for the study of disordered magnetic systems. In these diluted random alloys, neighboring magnetic ions form clusters through short range spin exchange interactions. A number of experiments [1-8] have been devoted to the investigation of the nearest-neighbor (NN) coupled magnetic ion pairs, by measuring the quantized total spin in a field. In (Cd,Mn)Te, the obtained NN exchange constant J1 is -6.1K[7,8]. However, to understand full range of magnetic and optical phenomena in DMS, it is important to explore the behavior of clusters larger than pairs and interactions beyond NN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 455
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Shapira, Y., Foner, S., Ridgley, D.H., Dwight, K. and Wold, A., Phys. Rev. B30, 4021 (1984).Google Scholar
2. Aggarwal, R.L., Jasperson, S.N., Shapira, Y., Foner, S., Sakakibara, T., Goto, T., Miura, N., Dwight, K. and Wold, A., Proc. 17th Intern. Conf. on Phys. of Semicon., p. 1419 (Springer, New York 1985).Google Scholar
3. Shapira, Y. and Oliveria, N.F. Jr., Phys. Rev B35, 6888 (1987).Google Scholar
4. Larson, B.E., Hass, K.C. and Aggarwal, R.L., Phys. Rev. B33, 1718 (1986).Google Scholar
5. Galazka, R.R., Dobrowolski, W., Lascaray, J.P., Nawrocki, M., Bruno, A., Broto, J.M., and Ousset, J.C., J. Magn. Magn. Mat. 72, 174 (1988) and references therein.Google Scholar
6. Yamada, N., Takeyama, S., Sakaldbara, T., Goto, T., and Miura, N., Phys. Rev. B34, 4121 (1986) and references therein.Google Scholar
7. Isaacs, E.D., Heiman, D., P.Becla, Shapira, Y., Kershaw, R., Dwight, K. and Wold, A., Phys. Rev B38, 8412 (1988).Google Scholar
8. Foner, S., Shapira, Y., Heiman, D., Becla, P., Kershaw, R., Dwight, K. and Wold, A., Phys. Rev. B39, 11793 (1989), and references therein.Google Scholar
9. Wang, Xiaomei, Heiman, D., Foner, S., Becla, P., Phys. Rev. B41, 1135, (1990)Google Scholar
10. Behringer, R.E., J. Chem. Phys. 29, 537 (1958).Google Scholar
11. Jonge, W.J.M. de, Twardowski, A., Denissen, C.J.M., and Swagten, H.J.M.. Mat.Res. Soc. Syrnp. Proc. Vol.89, 153 (1987).Google Scholar
12. Escorne, M. and Mauger, A., Phys. Rev. B25, 4674, (1982).Google Scholar
13. Giebultowict, T.M. and Holden, T.M., Semiconductors and Semimetals, Vol.25, 125, 1988 Google Scholar