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Open-Circuit Voltage Physics in Amorphous Silicon Solar Cells

Published online by Cambridge University Press:  17 March 2011

L. Jiang ,
J. H. Lyou ,
S. Rane ,
E. A. Schiff ,
Q. Wang  and
Q. Yuan
S. Rane
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130
Q. Yuan
Affiliation:
Department of Physics, Syracuse University, Syracuse, NY 13244-1130
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Abstract

We have performed computer calculations to explore effects of the p/i interface on the open-circuit voltage in a-Si:H based pin solar cells. The principal conclusions are that interface limitation can occur for values of VOC significantly below the built-in potential VBI of a cell, and that the effects can be understood in terms of thermionic emission of electrons from the intrinsic layer into the p-layer. We compare measurements of VOC and electroabsorption estimates of VBI with the model calculations. We conclude that p/i interface limitation is important for current a-Si:H based cells, and that the conduction band offset between the p and i layers is as important as the built-in potential for future improvements to VOC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A18.3
Copyright
Copyright © Materials Research Society 1999

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Footnotes

*

Present address: Guidant Corporation, Minneapolis, MN

†

Permanent address: Department of Physics, Korea University, Chungnam 399-800, South Korea

§

Present address: National Renewable Energy Laboratory, Golden, CO 80401

References

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