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Oxide Degradation Resulting from Photoresist Ashing

Published online by Cambridge University Press:  21 February 2011

P. I. Mikulan ,
T. T. Koo ,
O. O. Awadelkarim ,
S. J. Fonash ,
T. Ta  and
Y. D. Chan
P. I. Mikulan
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
T. T. Koo
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
O. O. Awadelkarim
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
T. Ta
Affiliation:
On assignment to SEMATECH from AT&T, Orlando, FL
Y. D. Chan
Affiliation:
On assignment to SEMATECH from Rockwell International, Newport Beach, CA
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Abstract

In this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generator (Upstream) and two microwave power reactors (Microwave 1 and Microwave 2). Aluminum capacitors were evaporated on the samples after the ashing for oxide evaluation. Electrical characterization of these MOS structures included capacitance verses voltage and time dependent dielectric breakdown measurements. We also looked for Si substrate damage in these samples using deep level transient spectroscopy and Schottky barrier current-voltage measurements. This characterization showed oxide damage varied widely with ashing tool. In all cases, however, there was no significant Si substrate damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 61
Copyright
Copyright © Materials Research Society 1993

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References

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