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Pd/Ge Contacts to n-TYPE InP

Published online by Cambridge University Press:  22 February 2011

Ping Jian ,
Douglas G. Ivey ,
Robert Bruce  and
Gordon Knight
Ping Jian
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Douglas G. Ivey
Affiliation:
Department of Mining, Metallurgical and Petroleum Engineering, University of Alberta, Edmonton, Alberta, Canada, T6G 2G6
Robert Bruce
Affiliation:
Bell Northern Research, Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7
Gordon Knight
Affiliation:
Bell Northern Research, Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada, K1Y 4H7
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Abstract

Multilayer metallizations of Pd/Ge/Pd, with different thickness ratios of Ge and Pd, were deposited onto n-type InP by means of electron beam evaporation. The specimens were then annealed in flowing N2 gas at temperatures ranging from 250 to 425°C for various times. Transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDX) and electron diffraction were used to identify the phase changes during reaction. The four point probe method was used for electrical resistance measurements. A Pd-In-P amorphous phase and a Pd2Ge compound formed during deposition. Subsequent annealing resulted in crystallization of the amorphous phase followed by epitaxial growth of Pd2InP(II) on InP at 350°C. At 425°C, Pd2InP(II) with Ge in solution, decomposed producing a contact with a lower specific contact resistance. The lowest contact resistances achieved were ∼10−5 Ωcm2. Further annealing led to more decomposition of InP, including presumably the Ge doped InP surface region, which corresponded to an increase in contact resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 225
Copyright
Copyright © Materials Research Society 1993

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References

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