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A Phase Diagram for Morphology and Properties of Low Temperature Deposited Polycrystalline Silicon Grown by Hot-wire Chemical Vapor Deposition

Published online by Cambridge University Press:  21 March 2011

Christine E. Richardson ,
Maribeth S. Mason  and
Harry A. Atwater
Christine E. Richardson
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A
Maribeth S. Mason
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A
Harry A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, U.S.A
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Abstract

The fabrication of low temperature polycrystalline silicon with lifetimes close to single crystalline silicon, but with internal surface passivation similar to that observed in deposited microcrystalline silicon, is a promising direction for thin film polycrystalline silicon photovoltaics. To achieve this, large grains with passivated grain boundaries and intragranular defects are required. We investigate the low-temperature (250-550°C) epitaxial growth of thin silicon films by hot-wire chemical vapor deposition (HWCVD) on Si(100) substrates and large-grained polycrystalline silicon template layers formed by selective nucleation and solid phase epitaxy (SNSPE). Using reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM), we have observed epitaxial, twinned epitaxial, mixed epitaxial/polycrystalline and polycrystalline phases in the 50 nm–15 μm thickness regime. HWCVD growth on Si(100) was performed using a mixture of diluted silane (4% in He) and hydrogen at a H2/SiH4 ratio of 50:1 at substrate temperatures from 300–475°C. We will discuss the relationship between the microstructure and photoconductive decay lifetimes of these undoped layers on Si(100) and SNSPE templates as well as their suitability for use in thin-film photovoltaic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A8.11
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Chen, C.M., Ph.D. thesis, California Institute of Technology, 2001.Google Scholar
2. Eaglesham, D. J., J. Appl. Phys. 77, 3597 (1995).Google Scholar
3. Karpenko, O. P., Yalisove, S. M., and Eaglesham, D. J., J. Appl. Phys. 82, 1157 (1997).Google Scholar
4. Ahrenkiel, R. K. and Johnston, S., Sol. Energy Mat. Sol. Cells 55, 59 (1998).Google Scholar
5. Ahrenkiel, R. K., Sol. Energy Mat. Sol. Cells 76, 243 (2003).Google Scholar
6. Ahrenkiel, R. K., Keyes, B. M., and Johnston, S., Surf. Eng. 16, 1 (2000).Google Scholar
7. Raichoudhury, P., Blais, P. D., Davis, J. R., Hopkins, R. H., and McCormick, J. R., J. Elec. Mat. 5, 435 (1976).Google Scholar
8. Thiesen, J., Iwaniczko, E., Jones, K.M., Mahan, A., and Crandall, R., Appl. Phys. Letters 75, 992 (1999).Google Scholar
9. Watahiki, T., Yamasa, A., and Konagai, M., J. Crys. Grwth 209, 335 (2000).Google Scholar