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Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

Published online by Cambridge University Press:  15 February 2011

Indra Nurdjaja  and
E. A. Schiff
Indra Nurdjaja
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
E. A. Schiff
Affiliation:
Dept. of Physics, Syracuse University, Syracuse, NY 13244–1130
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Abstract

We present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 723
Copyright
Copyright © Materials Research Society 1997

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References

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