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Photoluminescence from Gd-implanted AlN and GaN Epilayers

Published online by Cambridge University Press:  01 February 2011

John M Zavada ,
Neeraj Nepal ,
J. Lin ,
K. H. Kim ,
H. X. Jiang ,
J. Hite ,
G. T. Thaler ,
R. M. Frazier ,
C. R. Abernathy  and
S. J. Pearton
John M Zavada
Affiliation:
john.zavada@us.army.mil, U.S. Army Research Office, Electronics Division, 4300 S. Miami Blvd., Durham, NC, 27703, United States, 919-549-4238, 919-549-4310
Neeraj Nepal
Affiliation:
Kansas State University, Department of Physics, 116 Cardwell Hall, Manhattan, KS, 66506-2601, United States
J. Lin
Affiliation:
Kansas State University, Department of Physics, 116 Cardwell Hall, Manhattan, KS, 66506-2601, United States
K. H. Kim
Affiliation:
Kansas State University, Department of Physics, 116 Cardwell Hall, Manhattan, KS, 66506-2601, United States
H. X. Jiang
Affiliation:
Jiang@phys.ksu.edu, Kansas State University, Department of Physics, 116 Cardwell Hall, Manhattan, KS, 66506-2601, United States
J. Hite
Affiliation:
University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
G. T. Thaler
Affiliation:
University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
R. M. Frazier
Affiliation:
University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
C. R. Abernathy
Affiliation:
University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
S. J. Pearton
Affiliation:
spear@mse.ufl.edu, University of Florida, Materials Science and Engineering, Gainesville, FL, 32611, United States
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Abstract

GaN and AlN thin films were implanted with gadolinium (Gd)atoms and characterized using deep ultra-violet (UV) photoluminescence(PL). The Gd-implanted samples were annealed at temperatures up to 1178K in a flowing N2 gas to facilitate recovery of implantation-related damage. Using the output at 195 nm from a quadrupled Ti:sapphire laser, narrow PL emission was observed at 318 nm from the Gd- implanted AlN thin films. This emission is characteristic of the lowest energy 4f transition of the trivalent Gd ion. A boarder emission band, also centered at 318 nm, was observed under excitation at 266 nm. No PL emission was observed from the Gd-implanted GaN thin films at either the bandedge or due to a 4f transition. The dependence of the UV emission on AlN sample temperature was systematically studied. The peak PL emission intensity decreased by less that a factor of 3 over the temperature range of 10 K to 300 K. Decay transients of the UV emission were measured indicating that the lifetime of this emission is very fast.

Keywords

Gdluminescencenitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I10-02
Copyright
Copyright © Materials Research Society 2007

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References

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