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Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application

Published online by Cambridge University Press:  01 February 2011

Daisuke Hoshi ,
Isao Nakamura  and
Masao Isomura
Daisuke Hoshi
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Isao Nakamura
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
Masao Isomura
Affiliation:
Department of Electric & Electronic Engineering, Tokai University 1117 Kitakaname, Hiratsuka, Kanagawa 259-1292, Japan
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Abstract

The poly crystalline Ge films were prepared by the RF sputtering method with Ar and Ar-H2 mixture gases. The crystallization temperature increases from 400 °C to 500 °C due to the H2 introduction into the sputtering gases. On the other hand, the H2 introduction decreases the absorption coefficients in the long wavelength region corresponding to lower energy values than the energy gap of Ge, although much higher absorption coefficients are observed in the case of the Ar sputtering. Probably, the gap state density decreases due to the hydrogen termination of dangling-bonds in the grain-boundaries. The (220) preferential orientation is stressed and the highest Hall mobility is obtained with 75% of the gas flow ratio [Ar/ (Ar+H2)]. The preferential growth probably causes higher quality Ge films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A6.5
Copyright
Copyright © Materials Research Society 2005

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References

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