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Porosity-Induced Optical Phonon Engineering in III-V Compounds

Published online by Cambridge University Press:  09 August 2011

I. M. Tiginyanu ,
G. Irmer ,
J. Monecke ,
H. L. Hartnagel ,
A. Vogt ,
C. Schwab  and
J.-J. Grob
I. M. Tiginyanu
Affiliation:
Technical University of Moldova, MD-2004 Chisinau, Moldova, hfmwe103@hrzpub.tudarmstadt. de
G. Irmer
Affiliation:
Technical University of Moldova, MD-2004 Chisinau, Moldova, hfmwe103@hrzpub.tudarmstadt. de
J. Monecke
Affiliation:
TU Bergakademie Freiberg, D-09596 Freiberg, Germany
H. L. Hartnagel
Affiliation:
Technische Universität Darmstadt, D-64283 Darmstadt, Germany
A. Vogt
Affiliation:
Technische Universität Darmstadt, D-64283 Darmstadt, Germany
C. Schwab
Affiliation:
CNRS/PHASE, BP-20, F-67037 Strasbourg Cedex 2, France
J.-J. Grob
Affiliation:
CNRS/PHASE, BP-20, F-67037 Strasbourg Cedex 2, France
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Abstract

New possibilities for modifying the phonon spectra of III-V compounds are evidenced by micro-Raman analysis of porous layers prepared by electrochemical anodization of (111 )Aoriented n-GaP substrates. In particular, a surface-related vibrational mode along with a porosity-induced decoupling between the longitudinal optical (LO) phonon and plasmon are observed. We prove that filling in the pores with other materials (aniline as a first approach) is a promising tool for controlling the surface phonon frequency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 99
Copyright
Copyright © Materials Research Society 1999

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