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Preparation of Microcrystalline Silicon with the Layer-by-Layer Technique at Various Plasma Excitation Frequencies

Published online by Cambridge University Press:  15 February 2011

P. Hapke ,
R. Carius ,
F. Finger ,
A. Lambertz ,
O. Vetterl  and
H. Wagner
P. Hapke
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
R. Carius
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
F. Finger
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
A. Lambertz
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
O. Vetterl
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
H. Wagner
Affiliation:
Forschungszentrum Juelich, ISI-PV, 52425 Juelich, Germany, p.hapke@kfa-juelich.de
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Abstract

For application as nucleation layer in thin film devices, microcrystalline silicon was deposited with the layer-by-layer technique using plasma excitation frequencies between 27 and 95 MHz, various hydrogen treatment times and various film thicknesses per layer. An optimum phase transformation is found at an intermediate plasma excitation frequency, i.e. at this frequency the shortest hydrogen annealing time is necessary for an effective amorphous-to-crystalline phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 737
Copyright
Copyright © Materials Research Society 1997

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References

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