Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-06-17T20:04:05.976Z Has data issue: false hasContentIssue false
  • English
  • Français

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

Published online by Cambridge University Press:  28 February 2011

Ying Wu ,
W. Savin ,
T. Fink ,
N. M. Ravindra ,
R. T. Lareau ,
R. L. Pfeffer ,
L. G. Yerke  and
C. Wrenn
Ying Wu
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
W. Savin
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
T. Fink
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
N. M. Ravindra
Affiliation:
Microelectronics Research Center, New Jersey Institute of Technology, Newark, NJ 07102
R. T. Lareau
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
R. L. Pfeffer
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
L. G. Yerke
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
C. Wrenn
Affiliation:
U.S. Army Electronics, Technology & Devices Lab(LABCOM), Fort Monmouth, NJ 07703
Get access

Abstract

Experimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 305
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sze, S.M., VLSI Technology, McGraw-Hill Book Company, (1988).Google Scholar
[2] Murarka, S.P., Silicides For VLSI Applications, Academic Press, Inc., (1983).Google Scholar
[3] Nakano, Motoo, Proceedings of The Second International Symposium on ULSI Science and Technology, Vol. 89–9, pp. 123–32, (1989).Google Scholar
[4] Ravindra, N.M. et.al., International Conference on Ion Beam Deposition and Mixing, Canada, June (1989).Google Scholar
[5] Ravindra, N.M., Fink, T., Moerkirk, R.P. and Fathy, D., Material Research Society Symposium Proceedings, Vol. 116, pp. 459–65, May (1988).Google Scholar
[6] Manual, Genplot, Computer Graphics Service, (1989).Google Scholar
[7] Ravindra, N.M. et. al., J. Nuclear Instruments and Methods in Research, North Holland, B46, pp. 409, (1990).Google Scholar
[8] Amano, Jun, Merchant, P., Cass, T.R. and Miller, J.N., J. Appl. Phys, 59(8), pp. 2689–93, 15 April, (1986).Google Scholar
[9] Murarka, S.P. and Peckerar, M.C., Electronic Materials Science and Technology, Academic Press, Inc., (1989).Google Scholar
[10] Delfno, M., et.al., J. Appl. Phys. 62–5, pp. 1882–86, (1987).Google Scholar
[11] Pinto, M.R., Rafferty, C.S, Yeager, H.R., Dutton, R.W., PISCES-II Technical Report, Standford Electronics Laboratories, Standford University, (1985).Google Scholar