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Production of Silicon Nanocrystals by Thermal Annealing of Silicon-Oxygen and Silicon-Oxygen-Carbon Alloys: Model Systems for Chemical and Structural Relaxation at Si-SiO2 and Sic-SiO2 Interfaces

Published online by Cambridge University Press:  09 August 2011

Gerald Lucovsky ,
David Wolfe  and
Bruce Hinds
Gerald Lucovsky
Affiliation:
Deptartments of Physics, North Carolina State University, Raleigh, NC 27695-8202 Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202 Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202
David Wolfe
Affiliation:
Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
Bruce Hinds
Affiliation:
Deptartments of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

This paper discusses the formation of silicon nanocrystals, nc-Si, by thermal annealing of hydrogenated amorphous thin films of SiOx, x<2 and (Si, C)Ox, x<2. Comparisons are made with SiCx films, providing additional insights into pathways for generation of nc-Si. These alloys are used as model systems for understanding chemical and structural relaxations occurring at Si-SiO2 and SiC-SiO2 interfaces during post-oxidation thermal annealing. This then provides important information for optimized processing of Si-SiO2 and SiC-SiO2 interfaces for device applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 111
Copyright
Copyright © Materials Research Society 1999

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References

[1] Ahn, J., Kim, J., Lo, G. Q. and Kwong, D.-L., Appi. Phys. Lett. 60, 2089 (1992).Google Scholar
[2] Yasuda, T., Ma, Y., Habermehl, S. and Lucovsky, G., Appl. Phys. Lett. 60, 434 (1992).Google Scholar
[3] Lucovsky, G., Niimi, H, Koh, K., Lee, D. R. and Jing, Z., in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Ed. by Massoud, H. Z., Poindexter, E. H. and Helms, C. R. (Electrochemical Soc., Pennington, 1996), p. 441.Google Scholar
[4] Lucovsky, G., Banerjee, A., Hinds, B., Claflin, B., Koh, K. and Yang, H., J. Vac. Sci. Technol. B 15, 1074 (1997).Google Scholar
[5] Lipkin, L. and Palmour, J. W., J. Electronic Materials 25, 909 (1996).Google Scholar
[6] Lucovsky, G., J. Non-Cryst. Solids 227, 1 (1998).Google Scholar
[7] Lucovsky, G. and Pollard, W. B., J. Vac. Sci. Technol. A 1, 313 (1983).Google Scholar
[8] Tsu, D. V., Lucovsky, G. and Davidson, B. N., Phys. Rev. B 40, 1795 (1989).Google Scholar
[9] Wang, F.et al., these proceedings.Google Scholar
[10] Lucovsky, G., Solid State Commun. 29, 571 (1979).Google Scholar
[11] Hollinger, G. and Himpsel, F. J., Appl. Phys. Lett. 44, 93 (1984).Google Scholar
[12] Keister, J. et al., submitted to J. Vac. Sci. Technol. (1999).Google Scholar
[13] Chen, M X. and Gibson, J. M., AppI. Physics Lett. 70, 1462 (1997).Google Scholar
[14] Hornetz, B., Michel, H-J., Halbritter, J., J. Mater. Res 9, 3088 (1994).Google Scholar