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Properties of Pt/Ti Contacts to III-V Materials

Published online by Cambridge University Press:  25 February 2011

A. Katz ,
S. Nakahara ,
S. N. G. Chu ,
B. E. Weir ,
C. R. Abemathy ,
W. S. Hobson ,
S. J. Pearton  and
W. Savin
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. Nakahara
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abemathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
W. Savin
Affiliation:
New Jersey Institute
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Abstract

Pt/Ti contact to variety of binary III-V and related ternary semiconductor materials were established. These contacts were formed by electron beam evaporation and subsequent rapid thermal processing in order to sinter the metal-semiconductor systems. The contacts to p-type InAs, GaAs, In0.53Ga0.43As, In0.52Al0.4As and Ga0.7Al0.3As were ohmic, as a result of heating at temperatures of 450°C or higher. The Pt/Ti contacts to InP and GaP displayed Schottky behavior as-deposited and preserved the rectifying nature through heat treatments, regardless of the processing conditions. The electrical properties and the microstructure evolution in these 7 systems is discussed in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 305
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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