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Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Published online by Cambridge University Press:  20 January 2011

Ping Du
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
I-Kuan Lin
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A. Global Science & Technology, Greenbelt, MD 20770, U.S.A.
Yunfei Yan
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
Xin Zhang
Affiliation:
Department of Mechanical Engineering, Boston University, Boston, MA 02215, U.S.A.
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Abstract

Silicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Campbell, S. A., The Science and Engineering of Microelectronic Fabrication. (Oxford, 1996).Google Scholar
2. Zhang, X., Zhang, T. Y., Wong, M. and Zohar, Y., Sens. Actuator A-Phys. 64, 109115 (1998).CrossRefGoogle Scholar
3. Cao, Z., Zhang, T. Y. and Zhang, X., J. Appl. Phys. 97, 104909 (2005).CrossRefGoogle Scholar
4. Cao, Z. and Zhang, X., Sensor. Actuat A-Phys. 127, 221227 (2006).CrossRefGoogle Scholar
5. Yoshihara, H., Mori, H. and Kiuchi, M., Thin Solid Films 76, 110 (1981).CrossRefGoogle Scholar
6. Guzman, L., Tuccio, S., Miotello, A., Laidani, N., Calliari, L. and Kothari, D. C., Surf. Coat. Tech. 66, 458463 (1994).CrossRefGoogle Scholar
7. Denisse, C. M. M., Troost, K. Z., Elferink, J. B. O., Habraken, F., Vandeweg, W. F. and Hendriks, M., J. Appl. Phys. 60, 25362542 (1986).CrossRefGoogle Scholar
8. Zhang, X., Zhang, T. Y., Wong, M. and Zohar, Y., J. Microelectromech. Syst. 7, 356364 (1998).CrossRefGoogle Scholar
9. Liu, Y., Lin, I. K. and Zhang, X., Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process. 489, 294301 (2008).CrossRefGoogle Scholar
10. Choi, D., Ph.D. Thesis, Massachusetts Institute of Technology, 2004.Google Scholar
11. Mehregany, M., Zorman, C. A., Rajan, N. and Wu, C. H., Proc. IEEE 86, 15941610 (1998).CrossRefGoogle Scholar
12. Putty, M. W., Chang, S.-C., Howe, R. T., Robinson, A. L. and Wise, K. D., Sens. Actuator 20, 143151 (1989).CrossRefGoogle Scholar
13. Oliver, W. C. and Pharr, G. M., J. Mater. Res. 7, 15641583 (1992).CrossRefGoogle Scholar
14. Oliver, W. C. and Pharr, G. M., J. Mater. Res. 19, 320 (2004).CrossRefGoogle Scholar
15. Stoney, G. G., Proc. Roy. Soc. A-Math. Phy. 82, 172175 (1909).Google Scholar
16. Dheurle, F. M. and Harper, J. M. E., Thin Solid Films 171, 8192 (1989).CrossRefGoogle Scholar
17. Ziebert, C., Ye, J., Ulrich, S., Prskalo, A. P. and Schmauder, S., J. Nanosci. Nanotechno. 10, 19 (2010).CrossRefGoogle Scholar
18. Chen, K. S., Zhang, X. and Lin, S. Y., Thin Solid Films 434, 190202 (2003).CrossRefGoogle Scholar
19. Thornton, J. A. and Hoffman, D. W., Thin Solid Films 171, 531 (1989).CrossRefGoogle Scholar