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Room-Temperature Life Test of Nichia AlGaN/InGaN/GaN Blue Light Emitting Diodes

Published online by Cambridge University Press:  21 February 2011

Marek Osiński
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081, USA, osinski@chtm.unm.edu
Christopher J. Helms
Affiliation:
Sandia National Laboratories, P.O.Box 5800, Albuquerque, New Mexico 87185-0527, USA
Niel Berg
Affiliation:
Sandia National Laboratories, P.O.Box 5800, Albuquerque, New Mexico 87185-0527, USA
Daniel L. Barton
Affiliation:
Sandia National Laboratories, P.O.Box 5800, Albuquerque, New Mexico 87185-0527, USA
B. Scott Phillips
Affiliation:
Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131-6081, USA, osinski@chtm.unm.edu
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Abstract

We report on the current status of room-temperature life testing of Nichia NLPB-500 blue light emitting diodes. So far, two tests have been completed. During the first 1000-h test, a constant current of 20 mA was maintained in all devices. During the second 1650 h test, groups of 3 or 4 devices were driven at currents ranging from 20 mA to 70 mA. Very little degradation has been observed in devices driven at normal conditions (20-30 mA), with a noticeable increase in degradation rate above 60 mA.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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