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Roughness evolution of high-rate deposited a-SiNx:H films studied by atomic force microscopy and real time spectroscopic ellipsometry

Published online by Cambridge University Press:  21 March 2011

P.J. van den Oever ,
M.C.M. van de Sanden  and
W.M.M. Kessels
P.J. van den Oever
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

The scaling behavior of the roughness evolution of silicon nitride (a-SiNx:H) films with different mass densities (deposited from SiH4-N2-H2 and SiH4-NH3 based plasmas) has been investigated by atomic force microscopy and real time spectroscopic ellipsometry. The observed roughness exponent a is similar for both films, whereas the growth exponent b is a factor of two smaller for the higher density films. The relation between the lower value of b and the higher mass density is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.35
Copyright
Copyright © Materials Research Society 2004

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References

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