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Si(100) Surface Cleaning Using Sr and SrO

Published online by Cambridge University Press:  01 February 2011

Yi Wei ,
Xiaoming Hu ,
Yong Liang ,
D.C. Jordan ,
Brad Craigo ,
Ravi Droopad ,
Z. Yu ,
Alex Demkov ,
John L. Edwards Jr  and
Karen Moore
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Xiaoming Hu
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Yong Liang
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
D.C. Jordan
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Brad Craigo
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Ravi Droopad
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Z. Yu
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Alex Demkov
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
John L. Edwards Jr
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
Karen Moore
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
William J. Ooms
Affiliation:
Physical Science Research Laboratory, Motorola Labs, Motorola Inc. 7700 S. River Parkway, Tempe, AZ 85284
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Abstract

A method for removing SiO2 and producing an ordered Si(100) surface using Sr or SrO has been developed. In this technique, a few monolayers of Sr or SrO are deposited onto the as received Si(100) wafer in a ultrahigh vacuum molecular beam epitaxy system. The substrate is then heated to ∼800°C for about 5 minutes, the SiO2 is removed to leave behind a Sr terminated Si(100) surface. This Sr terminated Si(100) surface is well suited for the growth of crystalline high k dielectric SrTiO3 films. Temperature programmed desorption measurements were carried out to understand the mechanism of removing SiO2 from Si(100) using Sr or SrO. The species we observed coming off the surface during the temperature cycle was mainly SiO and O, no significant amount of Sr containing species was observed. We conclude that the SiO2 removal is due to the catalyst reaction SiO2 + Sr (or SrO) → SiO (g) + O + Sr (or SrO). The reaction happened through several intermediate steps. The reaction SiO2 + Si → 2SiO (g) at the SiO2/Si interface is limited and the pit formation is suppressed. The main roles that Sr or SrO play during the oxide removal process are catalysts promoting SiO formation and preventing further etching and the formation of pits in the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B3.4
Copyright
Copyright © Materials Research Society 2002

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