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Some Considerations of MOCVD for the Preparation of High Tc Thin Films

Published online by Cambridge University Press:  15 February 2011

Michael L. Hitchman ,
Sarkis H. Shamlian ,
Douglas D. Gilliland ,
David J. Cole-Hamilton ,
Simon C. Thompson ,
Stephen L. Cook  and
Barbara C. Richards
Michael L. Hitchman
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
Sarkis H. Shamlian
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
Douglas D. Gilliland
Affiliation:
Department of Pure and Applied Chemistry, University of Strathclyde, Glasgow GB-G1 1XL
David J. Cole-Hamilton
Affiliation:
Chemistry Department, University of St. Andrews, St. Andrews GB-KY 16 9ST
Simon C. Thompson
Affiliation:
Chemistry Department, University of St. Andrews, St. Andrews GB-KY 16 9ST
Stephen L. Cook
Affiliation:
The Associated Octel Co. Ltd., PO Box 17, Ellesmere Port, South Wirral, GB-L65 4HF
Barbara C. Richards
Affiliation:
The Associated Octel Co. Ltd., PO Box 17, Ellesmere Port, South Wirral, GB-L65 4HF
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Abstract

In this paper we first give a brief overview of the MOCVD of high temperature superconductors and consider the general requirements of a precursor. We then present results for deposition from Y containing precursors and compare apparent enthalpies of sublimation and deposition activation energies with values in the literature. The problem of Ba containing precursors are briefly reviewed and results given for the sublimation of and deposition from a new stable and volatile precursor. Finally, some comments are made about possible deposition mechanisms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 249
Copyright
Copyright © Materials Research Society 1994

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References

1. Bednorz, J. G. and Mueller, K. A., Z. Phys. B. 64, 189 (1986)Google Scholar
2. Wu, M. K., Ashburn, J. R., Torng, C. J., Hor, P. H., Meng, R. L., Gao, L., Huang, Z. J., Wang, Y. Q. and Chu, C. W., Phys. Rev. Letts. 58, 908 (1987)Google Scholar
3. Berry, A. D., Gaskill, K. D., Holm, R. T., Cukauskas, E. J., Kaplan, R. and Henry, R. L., Appl. Phys. Lett. 52, 1743 (1988)Google Scholar
4. Berry, A. D., Holm, R. T., Cukauskas, E. J., Fatemi, M., Gaskill, D. K., Kaplan, R. and Fox, W. B., J. Crystal Growth 92, 344 (1988)Google Scholar
5. Richeson, D. S., Tonge, L. M., Zhao, J., Zhang, J., Marcy, H. O., Marks, T. J., Wessels, B. W. and Kannewurf, C. R., Appl. Phys. Lett. 54, 2154 (1989)Google Scholar
6. R & D in Brief, R. & D Magazine June 1993, p.5Google Scholar
7. Gosling, W. in Superconductivity: The Opportunities, Implications and Applications, edited by Conway, A. (IBC Technical Services Ltd, London, 1988), p.25 Google Scholar
8. Science and the Citizen, Scientific American 264, 15 (1991)Google Scholar
9. Industry News, Semiconductor International, April 1993, p. 18 Google Scholar
10. News Item, Chem. Eng. P. Sept. 1989, p. 44 Google Scholar
11. Zhao, J., Chern, C. S., Li, Y. Q., Noh, D. W., Norris, P., Zawadzki, P., Kear, B. and Gallois, B., J. Cryst. Growth 107, 699 (1991)CrossRefGoogle Scholar
12. Hitchman, M. L., Gilliland, D. D., Cole-Hamilton, D. J. and Thompson, S. C., in New Materials and their Applications (Inst. Phys. Conf. Ser. III), edited by Holland, D. (Institute of Physics, Bristol, 1991), p. 305.Google Scholar
13. Leskela, M., Molsa, H. and Niinisto, L., Supercond. Sci. Technol. 6, 627 (1993)Google Scholar
14. Thompson, S. C., Cole-Hamilton, D. J., Gilliland, D. D., Hitchman, M. L. and Barnes, J. C., Adv. Mat. Opt. Electron, 1, 81 (1992)Google Scholar
15. Gilliland, D. D., Hitchman, M. L., Thompson, S. C. and Cole-Hamilton, D. J., J. Phys. III France 2, 1381 (1992).Google Scholar
16. Sievers, R. E. and Sadlowski, J. E., Science 201, 217 (1978)Google Scholar
17. Rees, W. S., Luten, H. A., Carris, M. W., Doskocil, E. J. and Goedken, V. L., MRS Symp. Proc. 1992, 141Google Scholar
18. Fitzer, E., Oetzmann, H., Schmaderer, F. and Wahl, G. in Proc. Eighth Eur. Conf. CVD, edited by Hitchman, M. L. and Archer, N. J. (Les Editions de Physique, Paris, 1991), p.C2–713 Google Scholar
19. Shamlian, S. H., Hitchman, M. L., Cook, S. L. and Richards, B. C., J. Mat. Chem., in pressGoogle Scholar
20. Schmaderer, F., Huber, R., Oetzmann, H. and Wahl, G., in Proc. Eighth Eur. Conf. CVD, edited by Hitchman, M. L. and Archer, N. J. (Les Editions de Physique, Paris, 1991), p.C2–539 Google Scholar
21. Kim, S. H., Cho, C. H., No, K. S. and Chun, J. S., J. Mat. Res. 6, 704 (1991)Google Scholar
22. Erbil, A., Zhang, K. and Boyd, E. P., SPIE, 1187, 104 (1989)Google Scholar
23. Spee, C. I. M. A., Van der Zouwen-Assink, E. A., Timmer, K., Mackor, A. and Meinema, H. A., in Proc. Eighth Eur. Conf. CVD, edited by Hitchman, M. L. and Archer, N. J. (Les Editions de Physique, Paris, 1991), p.C2–295 Google Scholar
24. Amano, R., Sata, A. and Suzuki, S., Bull. Chem. Soc. Jap. 54, 1368 (1981)CrossRefGoogle Scholar
25. Spee, C. I. M. A. and Saunders, L. (private communication)Google Scholar
26. Hitchman, M. L., Progr. Crystal Growth 4, 249 (1981)Google Scholar
27. Gilliland, D. D., PhD thesis, University of Strathclyde, 1993 Google Scholar
28. Caplin, D., Nature 335, 204 (1988)Google Scholar
29. Li, Y. Q., Zhao, J., Chen, C. S., Lu, P., Gallois, B., Norris, P., Kear, B. and Cosandey, F., Physica C 195,161 (1992)Google Scholar
30. Thursh, E. J., Cureton, C. G., Trigg, J. M., Stagg, J. P. and Butler, B. R., Chemtronics 2, 62 (1987)Google Scholar
31. Timmer, K. and Spee, C. I. M. A., Dutch Patent Application No. 9302030, 1993 Google Scholar
32. Shinohara, K., Munakata, F. and Yamanaka, M., Jap. J. Appl. Phys. 27, L1683 (1988)Google Scholar
33. Bradley, D. C., Hasan, M., Hursthouse, M. B., Motevalli, M., Khan, O. F. Z., Pritchard, R. G. and Williams, J. O., J. Chem. Soc., Chem. Commun. 1992, 575Google Scholar
34. Hathaway, B. J., in Comprehensive Coordination Chemisty, Vol. 5, edited by Wilkinson, G., Gillard, R. D. and McCleverty, J. A. (Pergamon, Oxford, 1987), p.533 Google Scholar
35. Timmer, K., Spee, C. I. M. A., Mockor, A. and Meinema, H. A., Inorg. Chim. Acta. 190, 109 (1992)Google Scholar