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Spatially Resolved Site Selective Optical Spectroscopy on Nd Doped GaN Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

Nate Woodward ,
Naveen Jha ,
Eric Readinger ,
Grace Metcalfe ,
Michael Wraback  and
Volkmar Dierolf
Nate Woodward
Affiliation:
naw205@lehigh.edu, Lehigh University, United States
Naveen Jha
Affiliation:
nkj2@Lehigh.EDU, Lehigh University, United States
Eric Readinger
Affiliation:
ereadinger@arl.army.mil, Army Research Lab, Adelphi, United States
Grace Metcalfe
Affiliation:
grace.chern@arl.army.mil, Army Research Lab, Adelphi, United States
Michael Wraback
Affiliation:
mwraback@arl.army.mil, Army Research Lab, Adelphi, United States
Volkmar Dierolf
Affiliation:
vod2@lehigh.edu, Lehigh University, United States
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Abstract

Due to its favorable electronic and thermal properties GaN has been considered as a rare-earth host material for solid state amplifier and laser applications. To this end, we performed spatially resolved combined excitation emission spectroscopy (CEES) on Nd ions which were in-situ-doped into GaN epitaxial films grown by plasma assisted molecular beam epitaxy (PA-MBE) on c-plane sapphire substrate. For a wide range of concentration (up to 8at%) we find in the emission a dominant incorporation site, which can be identified with good certainty as a substitutional ‘Ga’ site. Energy levels and electron-phonon coupling to a localized mode can be identified. For the majority site, confocal spectral imaging under selective excitation show changes in emission intensity, excitation and emission wavelength on a submicron length scale suggesting spatial inhomogeneities in terms of Nd3+ ion concentration.

Keywords

III-Voptical propertiesluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D02-06
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1. Steckl, A. J., Heikenfeld, J. C., Lee, D. S., Garter, M. J., Baker, C. C., Wang, Y. Q., and Jones, R., IEEE J. Sel. Topics Quantum Electron. 8 (4), 749 (2002).Google Scholar
2. Favennec, P. N., Lharidon, H., Salvi, M., Moutonnet, D., and Leguillou, Y., Electronics Lett. 25 (11), 718 (1989).Google Scholar
3. Sichel, E. K. and Pankove, J. I., J. Phys. Chem. Solids 38 (3), 330 (1977).Google Scholar
4. Koechner, W., Solid-State Laser Engineering, (Springer, Berlin, 1999), 5th ed., pg. 37.Google Scholar
5. Kim, S., Rhee, S. J., Li, X., Coleman, J. J., and Bishop, S. G., Phys. Rev. B 57 (23), 14588 (1998).Google Scholar
6. Silkowski, E., Yeo, Y. K., Hengehold, R. L., Goldenberg, B., and Pomrenke, G. S., “Rare Earth Doped Semiconductors II Symposium, 69 (1996).Google Scholar
7. Kim, J. H. and Holloway, P. H., Appl. Phys. Lett. 85 (10), 1689 (2004).Google Scholar
8. Readinger, E. D., Metcalfe, G. D., Shen, H., and Wraback, M., Appl. Phys. Lett. 92, 061108 (2008).Google Scholar
9. Metcalfe, G. D., Readinger, E. D., Shen, H., Woodward, N. T., Dierolf, V., and Wraback, M., Journal of Appl. Phys. submitted 2008.Google Scholar
10. Dierolf, V. and Sandmann, C., Luminescence, J. . 125, 67 (2007).Google Scholar
11. Light aided domain patterning and rare earth emission based imaging of ferroelectric domains, in Micro/nano engineering and characterization of ferroelectric crystals for applications in photonics (edited by P. Ferraro, S. Grilli, and P. De Natale, Springer-Verlag, Berlin, Heidelberg, New York, 2008)Google Scholar
12. Dierolf, V., Sandmann, C., Zavada, J., Chow, P., and Hertog, B., J. Appl. Phys. 95 (10), 5464 (2004).Google Scholar
13. Dierolf, V., Fleischman, Z., Sandmann, C., Wakahara, A., Fujiwara, T., Munasinghe, C., Steckl, A, “Combined Excitation Emission Spectroscopy of Europium ions in GaN and AlGaN films,” Mater. Res. Soc. Symp. Proc. 866, V3.6.1 (2005).Google Scholar
14. Wahl, U., Alves, E., Lorenz, K., Correia, J.G., Monteiro, T., De Vries, B., Vantomme, A., Vianden, R. Materials Science and Engineering B105 132 (2003).Google Scholar