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Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

Published online by Cambridge University Press:  09 August 2011

H. Koyama  and
P. M. Fauchet
H. Koyama
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
P. M. Fauchet
Affiliation:
Department of Electrical and Computer Engineering, University of Rochester, Rochester, NY
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Abstract

The optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 9
Copyright
Copyright © Materials Research Society 1999

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