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Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

Huixin Xiu ,
Pedro MFJ Costa ,
Matthias Kauer ,
Tim M Smeeton ,
Stewart E Hooper ,
Jonathan Heffernan  and
Colin J Humphreys
Huixin Xiu
Affiliation:
hx213@cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom, 00441223334404
Pedro MFJ Costa
Affiliation:
pedromfjcosta@googlemail.com, University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
Matthias Kauer
Affiliation:
matthias.kauer@sharp.co.uk, Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Tim M Smeeton
Affiliation:
tim.smeetion@sharp.co.uk, Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Stewart E Hooper
Affiliation:
stewart.hooper@sharp.co.uk, Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Jonathan Heffernan
Affiliation:
jon.heffernan@sharp.co.uk, Sharp Laboratories of Europe Ltd, Edmund Halley Road, Oxford Science Park, Oxford, OX4 4GB, United Kingdom
Colin J Humphreys
Affiliation:
colin.humphreys@msm.cam.ac.uk, University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge, CB2 3QZ, United Kingdom
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Abstract

This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects – possibly inversion domains – exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.

Keywords

III-Vmolecular beam epitaxy (MBE)transmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-07
Copyright
Copyright © Materials Research Society 2007

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References

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