Hostname: page-component-848d4c4894-ndmmz Total loading time: 0 Render date: 2024-06-02T18:03:14.875Z Has data issue: false hasContentIssue false
  • English
  • Français

Surfactant Mediated Epitaxial Growth of Co on Au(111) Surface

Published online by Cambridge University Press:  11 February 2011

Masao Kamiko ,
Sang-Mun Oh ,
Hiroaki Chihaya ,
Hiroyuki Mizuno ,
Junhua Xu ,
Lihua Yu ,
Isao Kojima  and
Ryoichi Yamamoto
Masao Kamiko
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153–8505, JAPAN.
Sang-Mun Oh
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153–8505, JAPAN.
Hiroaki Chihaya
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153–8505, JAPAN.
Hiroyuki Mizuno
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153–8505, JAPAN.
Junhua Xu
Affiliation:
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1–1, Tsukuba, Ibaraki 305–8565, JAPAN
Lihua Yu
Affiliation:
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1–1, Tsukuba, Ibaraki 305–8565, JAPAN
Isao Kojima
Affiliation:
National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5, Higashi 1–1, Tsukuba, Ibaraki 305–8565, JAPAN
Ryoichi Yamamoto
Affiliation:
Institute of Industrial Science, University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153–8505, JAPAN.
Get access

Abstract

We have chosen Bi as the surfactant atom in the heteroepitaxial growth of Co on Au(111). It was found that Bi induces layer-by-layer (LBL) growth at room temperature. With pre-deposition of 0.2 ∼ 0.8Å Bi on Au(111) prior to the evaporation of Co, more long-lasting RHEED intensity oscillations were observed and this implies that it induces the LBL growth of Co film. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there is a suitable amount of Bi surfactant layer that induces the smoother LBL growth. A surface segregation of Bi was found at the top of surface and acts as a surfactant by promoting the interlayer transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W5.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Copel, M., Reuter, M. C., Kaxiras, E. and Tromp, R. M., Phys. Rev. lett. 63, 632 (1989).Google Scholar
2. Egelhoff, W. F. Jr and Steigerwald, D. A., J. Vac. Sci. Technol. A7, 2167 (1989).Google Scholar
3. van der Vegt, H. A., van Pinxteren, H. M., Lohmeier, M., Vlieg, E. and Thornton, J. M. C., Phys. Rev. lett. 68, 3335 (1992).Google Scholar
4. Camarero, J., Graf, T., de Miguel, J. J., Miranda, R., Kuch, W., Zharnikov, M., Dittschar, A., Schneider, C. M. and Kirschner, J., Phys. Rev. lett. 76, 4428 (1996).Google Scholar
5. Mae, K., Kyuno, K. and Yamamoto, R., Modelling Simul. Mater. Sci. Eng. 4, 73 (1996).Google Scholar
6. Kamiko, M., Mizuno, H., Lu, G.-H., Zhou, Y.-M. and Yamamoto, R., Mat. Res. Soc. Symp. Proc. 697, P8.27.1 (2002).Google Scholar
7. Melle, H. and Menzel, E., Z. Naturforsch. 33a, 282 (1978).Google Scholar
8. Barth, J. V., Brune, H., Ertl, G. and Behm, R. J., Phys. Rev. B42, 9307 (1990).Google Scholar
9. See, for ex., Voigtländer, B., Meyer, G and Amer, N. M., Phys. Rev. B44, 10354 (1991).Google Scholar
10. Marsot, N., Belkou, R., Scheurer, F., Bartenlian, B., Barrett, N., Delaunay, M. A. and Guillot, C., Surf. Sci. 377–379, 225 (1997).Google Scholar
11. Tamura, S., Powell, C. J. and Penn, D. R., J. Vac. Sci. Technol. A8, 2213 (1990).Google Scholar
12. Ehrlich, G. and Hudda, F. G., J. Chem. Phys. 44, 1030 (1966).Google Scholar
13. Schwoebel, R. L. and Shipsey, E. J., J. Appl. Phys. 37, 3682 (1966).Google Scholar
14. van der Vegt, H. A., Vrijimoeth, J., Behm, R. J. and Vlieg, E., Phys. Rev. B57, 4127 (1998).Google Scholar