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Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

Published online by Cambridge University Press:  31 January 2011

Leonardo Miotti ,
Karen Paz Bastos ,
Cláudio Radtke  and
Gerald Lucovsky
Leonardo Miotti
Affiliation:
lmiotti@gmail.com, NCSU, Physics, Raleigh, North Carolina, United States
Karen Paz Bastos
Affiliation:
kpbastos@gmail.com, NCSU, Physics, Raleigh, North Carolina, United States
Cláudio Radtke
Affiliation:
claudio@iq.ufrgs., UFRGS, quimica, Porto Alegre, RS, Brazil
Gerald Lucovsky
Affiliation:
lucovsky@ncsu.edu, NCSU, Physics, Rlaeigh, North Carolina, United States
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Abstract

The stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

Keywords

dielectricphase equilibriachemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1194: Symposium A – High-k Dielectrics on Semiconductors with High Carrier Mobility , 2009 , 1194-A01-02
Copyright
Copyright © Materials Research Society 2010

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