Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-06-10T04:42:11.045Z Has data issue: false hasContentIssue false
  • English
  • Français

Thickness Effect on Nickel Silicide Formation and Thermal Stability for Ultra Shallow Junction CMOS

Published online by Cambridge University Press:  01 February 2011

F. F. Zhao ,
Z. X. Shen ,
J. Z. Zheng ,
W. Z. Gao ,
T. Osipowicz ,
C. H. Pang ,
P. S. Lee  and
A. K. See
F. F. Zhao
Affiliation:
Physics Department, 2 Science Drive 3, National University of Singapore, Singapore 117542.
Z. X. Shen
Affiliation:
Physics Department, 2 Science Drive 3, National University of Singapore, Singapore 117542.
J. Z. Zheng
Affiliation:
Chartered Semiconductor Manufacturing Limited, 60 Woodlands Industrial Park D, Street 2, Singapore 738406.
W. Z. Gao
Affiliation:
Chartered Semiconductor Manufacturing Limited, 60 Woodlands Industrial Park D, Street 2, Singapore 738406.
T. Osipowicz
Affiliation:
Physics Department, 2 Science Drive 3, National University of Singapore, Singapore 117542.
C. H. Pang
Affiliation:
School of Materials Engineering, Nanyang Technological University, Nanyang Avenue 3, Singapore 639798.
P. S. Lee
Affiliation:
Chartered Semiconductor Manufacturing Limited, 60 Woodlands Industrial Park D, Street 2, Singapore 738406.
A. K. See
Affiliation:
Chartered Semiconductor Manufacturing Limited, 60 Woodlands Industrial Park D, Street 2, Singapore 738406.
Get access

Abstract

High purity Ni films from 200Å down to 40Å on p-type Si (100) substrates are treated by rapid thermal annealing to form the metastable and stable phases of nickel silicides. The stoichiometric composition of NiSi determined by Rutherford backscattering is independent of the initial Ni thickness under 500°C annealing. Channeling RBS results reveal that the NiSi growth on Si (100) has no preferred orientation. The sheet resistance as well as surface roughness of thinner films starts to increase at a lower temperature, indicating that thinner films are thermally less stable. Agglomeration of NiSi film agrees with the grain boundary grooving model and occurs more easily within thinner films. The transformation from the NiSi phase to the NiSi2 phase is studied by micro-Raman spectroscopy. This phase transition of thinner films begins at a lower temperature than that of thicker ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B1.8
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Deng, F., Johnson, R.A., Asbeck, P.M., Lau, S. S., Dubbelday, W. B., Hsiao, T., Woo, J., J. Appl. Phys., 81, 8047 (1997).Google Scholar
2. Maex, K., Mater. Sci. Eng., R11, 53, 1993.Google Scholar
3. Mangelinck, D., Dai, J. Y., Pan, J. S., Lahiri, S. K., Appl. Phys. Lett., 75, 1736 (1999).Google Scholar
4. Liu, J. F., Chen, H. B., Feng, J. Y., Zhu, J., Appl. Phys. Lett., 77, 2177 (2000).Google Scholar
5. Murarka, S. P., Silicides for VLSI Applications, (Academic Press, New York, 1983).Google Scholar
6. Julies, B. A., Knoesen, D., Pretorius, R., Adams, D., Thin Solid Films, 347, 201 (1999).Google Scholar
7. Heurle, F., Petersson, C. S., Baglin, J. E. E., Placa, S. J., and Wong, C. Y., J. Appl. Phys., 55, 4208 (1984).Google Scholar
8. Mullins, W. W., J. Appl. Phys., 28, 333 (1957).Google Scholar
9. Jeon, H., Sukow, C. A., Honeycutt, J. W., Rozgonyi, G. A., Nemanich, R. J., J. Appl. Phys., 71, 4269 (1992).Google Scholar
10. Zhao, F. F., Shen, Z. X., Chen, S. Y., Zheng, J. Z., See, A. K., Chan, L. H., in Third International Conference on Microelectronics and Interface, edited by Gabriel, C. T., (AVS Proc., Santa Clara, CA, 2002), pp. 171–173.Google Scholar