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Time Resolved Photoluminescence of Cubic Mg Doped GaN

Published online by Cambridge University Press:  10 February 2011

R. Seitz ,
C. Gaspar ,
T. Monteiro ,
E. Pereira ,
B. Schoettker ,
T. Frey ,
D. J. As ,
D. Schikora  and
K. Lischka
R. Seitz
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
C. Gaspar
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
T. Monteiro
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
E. Pereira
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
B. Schoettker
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
T. Frey
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
D. J. As
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
D. Schikora
Affiliation:
University of Aveiro, Department of Physics, Aveiro, PORTUGAL, seitz@fis.ua.pt
K. Lischka
Affiliation:
University of Paderborn, Fachbereich Physik, Paderborn, Germany
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Abstract

Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 225
Copyright
Copyright © Materials Research Society 1999

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References

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