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Under Bump Metallization Development For High Sn Solders

Published online by Cambridge University Press:  10 February 2011

T. M. Korhonen ,
S. J. Hong ,
P. Su ,
C. Zhou ,
M. A. Korhonen  and
C.-Y. Li
T. M. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
S. J. Hong
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
P. Su
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
C. Zhou
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
C.-Y. Li
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca NY 14853
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Abstract

Several under bump metallisation (UBM) schemes using Ni or CuNi alloys as the solderable layer were investigated. Cr or Ti was used as the adhesion layer. The UBM pads of different compositions were sputter deposited on silicon wafers and patterned using standard photolithographic processes. Eutectic Sn-Pb solder balls were reflowed on top of the pads. The resulting interfacial microstructures were examined by SEMIEDX analysis of cross-sectioned samples. The integrity of the UBMIsolder interface was characterized by micromechanical shear testing of flip chip test samples. Growth of intermetallic layers was found to be significantly slower in Ni and CuNi schemes compared to pure Cu. The joints on Ni and CuNi had also a better adhesion at the UBM/solder interface, and in the shear tests the fracture occurred through the solder

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 505 , 1997 , 143
Copyright
Copyright © Materials Research Society 1998

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References

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