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Use of the curvature method to determine the misfit stress of epitaxial semiconducting systems: the case of samples thinned for TEM observation.

Published online by Cambridge University Press:  01 February 2011

A. Ponchet ,
M. Cabié ,
L. Durand ,
M. Rivoal  and
A. Rocher
A. Ponchet
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
M. Cabié
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
L. Durand
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
M. Rivoal
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
A. Rocher
Affiliation:
CEMES-CNRS, BP 94347, F-31055 Toulouse, France
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Abstract

The curvature method which allows to measure the stress in epitaxial layers has been adapted to transmission electron microscopy observations. The samples thinned by the substrate side present some particular mechanical characteristics. The ratio between the substrate thickness and the layer thickness should be taken into account. The experimental conditions allowing a reliable determination of the stress have been established. A finite element calculation has been used to show that the dimensions of the area where the measure is performed can not systematically be neglected. This method has been applied to the semiconducting systems Ga1-xInxAs/GaAs and Ga1-xInxAs/InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U1.9
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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