Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-06-02T14:19:22.022Z Has data issue: false hasContentIssue false
  • English
  • Français

Vapor Treatments of Spin-On Mesostructured Silica Films for the Enhancement of Structural Stability

Published online by Cambridge University Press:  10 February 2011

Shunsuke Tanaka ,
Norikazu Nishiyama ,
Yasuyuki Egashira ,
Yoshiaki Oku  and
Korekazu Ueyama
Shunsuke Tanaka
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Norikazu Nishiyama
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Yasuyuki Egashira
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Yoshiaki Oku
Affiliation:
MIRAI project, Association of Super-Advanced Electronics Technology, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
Korekazu Ueyama
Affiliation:
Division of Chemical Engineering, Graduate School of Engineering Science, Osaka University 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
Get access

Abstract

Organically functionalized mesoporous silica films were prepared by a novel synthesis procedure. The synthesis procedure involves a vapor infiltration technique for mesostructured silica films prepared through a spin-coating process. Organic-functional groups were incorporated into the mesochannel wall by the vapor infiltration treatment using organosiloxanes. The structural stability of spin-on mesostructured silica films is generally low, resulting in a structural shrinkage or a collapse of the mesostructure under calcination process. On the other hand, the treated films did not contract during calcination, indicating high structural stability. A contact angle of water on the treated film was large, showing high hydrophobicity. FTIR analysis suggested that the residual silanol groups were replaced with the organosilyl groups after vapor infiltration treatment. The increase in the film thickness was hardly observed under vapor infiltration, suggesting no deposition of organosiloxanes vapor on the surface of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P3.3
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Kresge, C.T., Leonowicz, M.E., Roth, W.J., Vartuli, J.C., and Beck, J. S., Nature, 359, 710 (1992).Google Scholar
[2] Beck, J.S., Vartuli, J.C., Roth, W.J.,Leonowicz, M.E., Kresge, C.T., Schmidtt, K.D., Chu, C.T.W., Olson, D.H., Sheppard, E.W., McCullen, S.B., Higgins, J.B., Schlenker, J.L., J. Am. Chem. Soc., 114, 10834 (1992).Google Scholar
[3] Yang, H., Coombs, N., Sokolov, I., and Ozin, G.A., Nature, 381, 589 (1996).Google Scholar
[4] Yang, H., Coombs, N., Dag, O., Sokolov, I., and Ozin, G.A., J. Mater. Chem., 7, 1755 (1997).Google Scholar
[5] Yang, H., Kuperman, A., Coombs, N., Mamich-Afara, S., and Ozin, G.A., Nature, 379, 703 (1996).Google Scholar
[6] Nishiyama, N.,Koide, A.,Egashira, Y., and Ueyama, K., Chem. Commun., 2499 (1998).Google Scholar
[7] Lu, Y., Ganguli, R., Drewien, C.A., Anderson, M.T., Brinker, C.J., Gong, W., Guo, Y., Soyez, H., Dunn, B., Huang, M.H., and Zink, J.I., Nature, 389, 364 (1997).Google Scholar
[8] Sellinger, A., Weiss, P.R., Nguyen, A., Lu, Y., Assink, R.A., Gong, W., and Brinker, C.J., Nature, 394, 256 (1998).Google Scholar
[9] Ogawa, M., J. Am. Chem. Soc., 116, 7941 (1994).Google Scholar
[10] Ogawa, M., Chem. Commun., 1149 (1996).Google Scholar
[11] Ogawa, M., Ishikawa, H., and Kikuchi, T., J. Mater. Chem., 8, 1783 (1998).Google Scholar
[12] Ogawa, M., and Masukawa, N., Micropor. Mesopor. Mater., 38, 35 (2000).Google Scholar
[13] Kundu, D., Zhou, H. S., and Honma, I., J. Mater. Sci. Lett., 17, 2089 (1998).Google Scholar
[14] Hozumi, A., Yokogawa, Y., Kameyama, T., Hiraku, K., Sugimura, H., Takai, O., and Okido, M., Adv. Mater., 12, 985 (2000).Google Scholar
[15] Nishiyama, N., Tanaka, S., Egashira, Y., Oku, Y., and Ueyama, K., Chem. Mater., 14, 4229 (2002).Google Scholar
[16] Nishiyama, N., Tanaka, S., Egashira, Y., Oku, Y., Kamisawa, A., and Ueyama, K., Proceeding of the MRS Symposium on Silicon Materials-Processing, Characterization and Reliability, Materials Research Society, 716, B5.2, 247 (2002).Google Scholar
[17] Oku, Y., Nishiyama, N., Tanaka, S., Ueyama, K., Hata, N., and Kikkawa, T., Proceeding of the MRS Symposium on Silicon Materials-Processing, Characterization and Reliability, Materials Research Society, 716, B12.6, 587 (2002).Google Scholar
[18] Hillhouse, H.W., Egmond, J. W. van, Tsapatsis, M., Hanson, J. C., and Larese, J. Z., Micropor. Mesopor. Mater., 44-45, 639 (2001).Google Scholar