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Yellow-green emission for ETS-LEDs and lasers based on a strained–InGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer

Published online by Cambridge University Press:  11 February 2011

Lisa McGill ,
Juwell Wu  and
Eugene Fitzgerald
Lisa McGill
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Juwell Wu
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
Eugene Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Epitaxial-transparent-substrate light emitting diodes with a primary emission peak at 590nm and a secondary peak at 560nm have been fabricated in the indium aluminum gallium phosphide (InAlGaP) system. The active layer consists of an undoped, compressively strained indium gallium phosphide (InGaP) quantum well on a transparent In0.22(Al0.2Ga0.8)0.78P/ ∇x[1nx(Al0.2Ga0.8)1-xP] /GaP virtual substrate. Theoretical modeling of this structure predicts an accessible wavelength range of approximately 540nm to 590nm (green to amber). Emission with a peak wavelength of 570nm has been observed via cathodoluminescence studies of undoped structures with a quantum well composition of In0.35Ga0.65P. Light emitting diodes have been fabricated utilizing simple top and bottom contacts. The highest LED power of 0.18μW per facet at 20mA was observed for a quantum well composition of In0.32Ga0.68P and a bulk threading dislocation density on the order of 7×106 cm-2. The spectrum of this device was composed of two peaks: a weak peak at the predicted 560nm wavelength and a stronger peak at 590nm. Based upon superspots present in electron diffraction from the quantum well region, we believe that the observed spectrum is the result of emission from ordered and disordered domains in the active region. The same device structure grown with a bulk threading dislocation density on the order of 5×107 cm-2 exhibited an identical spectral shape with a reduced power of 0.08μW per facet at 20mA. For a quantum well composition of In0.37Ga0.63P and an overall threading dislocation density on the order of 5×107 cm-2, a single peak wavelength of 588nm with a power of 0.06μW per facet at 20mA was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M7.5
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1 Craford, M.G., High Brightness Light Emitting Diodes, Semiconductors and Semimetals, 48, Academic Press (1997).Google Scholar
2 Vurgaftman, I. et al., Journal of Applied Physics, 89(11), 5815 (2001).Google Scholar
3 Fu, L.P., et al., IEEE Journal of Quantum Electronics, 33(7), 1123 (1997).Google Scholar
4 Casey, H. and Panish, M., Heterostructure Lasers, Part B: Materials and Operating Characteristics. Academic Press (1978).Google Scholar
5 Bour, D.P., et al., Applied Physics Letters, 50(10), 615 (1987).Google Scholar
6 Levinshtein, M et al., Handbook Series on Semiconductor Parameters, World Scientific (1999).Google Scholar
7 Fitzgerald, E.A., et al., Journal of Vacuum Science and Technology B, 10, 1807 (1992).Google Scholar
8 Kim, A.Y., et al., Journal of Vacuum Science and Technology B, 17, 1485 (1999).Google Scholar
9 Coldren, L.A. and Corzine, S.W., Diode Lasers and Photonic Integrated Circuits. John Wiley and Sons, Inc. (1995).Google Scholar
10 Cao, D.S., et al., Journal of Applied Physics, 67(2), 739 (1990).Google Scholar