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Influence of temperature on the electronic properties of Si δ-doped GaAs structures

Published online by Cambridge University Press:  29 November 2002

E. Ozturk ,
Y. Ergun ,
H. Sari  and
I. Sokmen
E. Ozturk*
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
Y. Ergun
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
H. Sari
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
I. Sokmen
Affiliation:
Dokuzeylul University, Department of Physics, Izmir, Turkey
*
eozturk@cumhuriyet.edu.tr
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Abstract

We have investigated theoretically the electronic structure of Si δ-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and the donor thickness. In this study, nonuniform distribution is different from Gaussian distribution used by other authors. From the self-consistent calculation, we have seen that at room temperature carriers which appear due to the impurity atoms are more efficient than temperature on the subband structure.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 21 , Issue 2 , February 2003 , pp. 97 - 101
Copyright
© EDP Sciences, 2003

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