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Study on preferred crystal orientations of Mg-Zr-O composite protective layer in AC-PDP

Published online by Cambridge University Press:  11 October 2006

G. Bingang*
Affiliation:
Advanced Display Research Center, Institute of Industrial Science, The University of Tokyo, Japan
L. Chunliang
Affiliation:
Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
S. Zhongxiao
Affiliation:
Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
L. Liu
Affiliation:
Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
F. Yufeng
Affiliation:
Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
X. Xing
Affiliation:
Key laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, P.R. China
F. Duowang
Affiliation:
Key laboratory of Opto-Electronic Technology and Intelligent Control of Ministry of Education, Lanzhou Jiaotong University, P.R. China
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Abstract

In order to study the preferred crystal orientations of Mg-Zr-O composite protective layers in PDP, Mg-Zr-O composite protective layers were deposited by Electron-beam Evaporator using (MgO+ZrO2) powder mixture as evaporation source material. X-ray diffractometer (XRD) was used to determine preferred crystal orientations of Mg-Zr-O composite protective layers, surface morphologies of films were analyzed by FESEM and voltage characteristics were examined in a testing macroscopic discharge cell of AC-PDP. On the basis of experimental analysis, the influence of oxide addition and deposition conditions on preferred orientations of Mg-Zr-O composite protective layers were investigated. The results showed that the preferred orientations of Mg-Zr-O films were determined by lattice distortion of MgO crystal. The deposition conditions have great effects on the preferred orientations of Mg-Zr-O films. The preferred orientations affect voltage characteristics through affecting surface morphology of Mg-Zr-O films. A small amount of Zr solution in MgO can decrease firing voltage compared with using pure MgO film. Firing voltage is closely related with the [ ZrO2/(MgO+ZrO2)] ratio of evaporation source materials.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2006

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