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Subband structure and band bending in symmetric modulation-doped double quantum wells

Published online by Cambridge University Press:  21 December 2004

F. Ungan ,
E. Ozturk ,
Y. Ergun  and
I. Sokmen
F. Ungan
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
E. Ozturk*
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
Y. Ergun
Affiliation:
Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey
I. Sokmen
Affiliation:
Dokuz Eylul University, Department of Physics, Izmir, Turkey
*
eozturk@cumhuriyet.edu.tr
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Abstract

We have calculated the subband structure and confinement potential of modulation-doped Ga$_{1-x}$AlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are determined by solving the Schrödinger and Poisson equations self-consistently. To understand the exchange correlation potential effects on the band bending and subband populations, this potential has been included in the calculation at 0 K and, at room temperature. We find that at low doping concentrations the effect of the exchange correlation potential is more pronounced on the subband populations.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 29 , Issue 1 , January 2005 , pp. 27 - 31
Copyright
© EDP Sciences, 2005

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