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Tunable dual-mode DFB laser for millimetre-wave signal generation

Published online by Cambridge University Press:  22 February 2011

S. Ginestar ,
F. van Dijk ,
A. Accard ,
F. Poingt ,
F. Pommereau ,
L. Le Gouezigou ,
O. Le Gouezigou ,
F. Lelarge ,
B. Rousseau  and
J. Landreau
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S. Ginestar*
Affiliation:
Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR 8520, Université Lille 1, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq Cedex, France
F. van Dijk
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
A. Accard
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
F. Poingt
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
F. Pommereau
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
L. Le Gouezigou
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
O. Le Gouezigou
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
F. Lelarge
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
B. Rousseau
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
J. Landreau
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
J.-P. Vilcot
Affiliation:
Institut d'Électronique, de Microélectronique et de Nanotechnologie, UMR 8520, Université Lille 1, Avenue Poincaré, BP 60069, 59652 Villeneuve d'Ascq Cedex, France
G.-H. Duan
Affiliation:
Alcatel-Thales III-V Lab, Route de Nozay, 91460 Marcoussis, France
*
stephane.ginestar@ies.univ-montp2.fr
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Abstract

Highly compact dual-mode semiconductor laser sources get more and more attention in different application fields such as radar, security and personal communication systems. When the two generated wavelengths are detected within the same photodetector, an electrical signal which frequency is the difference between the frequencies of the two optical modes will be issued. We report on an integrated semiconductor device which is composed of two in-line DFB sections that are using the same optical waveguide structure. The so generated dual-mode spectrum can be adjusted first, by the difference in the grating parameters of each DFB section and second, by their respective driving current. We will report on the characterisation of such a device focusing on tunability and linewidth aspects that are of prime importance in above mentioned applications.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 3: Focus on Telecom 2009 & JFMMA , March 2011 , 33609
Copyright
© EDP Sciences, 2011

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